Description: Specifications:1. DDR 533MHz/667MHz/800MHz2. 240-pin
socket type dual in line
memory module(DIMM)3. 2.6V
power supply4. Data rate: 533mbps5. 2.5V(SSTL-2 compatible) I/O6. Double data rate architecture, two data transfers per clock7. Bi-directional, data strobe (DQS) is transmitter/receiver with data, to be used
in capturing data at the receiver8. Data inputs and outputs are synchronized with DQS9. DQS is edge aligned with data for read, center aligned with data for write10. Differential
clock inputs(CK and CK)11. DLL aligns DQ and DQS transitions with CK transitions12. Commands entered on each positive CK edge, data referenced to both edges of DQS
13.
Auto precharge option for each burst access to both 14. Programmable burst length: 2, 4, 815. Programmable / CAS latency (CL): 316. Programmable output driver strength: normal /weak17. Refresh cycles: (8192 refresh cycles/64ms)18. 7.8US maximum average periodic refresh interval19. 2 variations of refresh20.
Auto refresh21. Self refresh
| Place of Origin: | China |
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| Brand: | OEM |
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| Packaging: | bulk |
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| Delivery Lead Time : | 1 - 3 days |