China National Electronics Imp & Exp Shaanxi Co Ltd
Photoconductive Cells
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| Keywords: | |
| Post Date: | 2007-12-20 |
Description:
Vmax: DC 100 to 500V Pmax: 50 to 500MW Ambient temperature: -30 to 70 degrees Celsius Spectral peak: 520 to 580nm Photo resistance (10Lx): 5 to 500Kohms Gamma characteristic (r): 0.5 to 0.8 Rise time: 20 to 40ms Decay time: 30 to 40ms Chip diameter: 4.0mm, 5.1mm, 7.0mm, 9.0mm, 12.0mm, 20.0mm
Vmax: DC 100 to 500V Pmax: 50 to 500MW Ambient temperature: -30 to 70 degrees Celsius Spectral peak: 520 to 580nm Photo resistance (10Lx): 5 to 500Kohms Gamma characteristic (r): 0.5 to 0.8 Rise time: 20 to 40ms Decay time: 30 to 40ms Chip diameter: 4.0mm, 5.1mm, 7.0mm, 9.0mm, 12.0mm, 20.0mm
| Place of Origin: | China (mainland) |
|---|---|
| Payment Terms : | <br> T/T in advance |
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