
The company operates under the Smart IDM model, focusing on the design, device development, production, sales, and application services of next-generation power semiconductor chips. It is committed to providing high-reliability, high-performance discrete devices, modules, and board-level solutions in industries such as new energy vehicles, computing power, energy storage, wind power, and industrial drives. Its products include third-generation semiconductor Silicon Carbide (SiC) MOSFETs and modules in the voltage range of 600V to 2000V, Silicon-based Super Junction (SJ) MOSFETs, IGBT discrete devices and modules, new integrated power chips, and board-level system solutions. The company has a mature mass production process for SiC MOSFETs and IGBT ultra-thin wafer backside technology, with performance and parameters on PAR with international products. In the chip manufacturing value chain, the company provides a "one-stop FSM+BGBM" solution for the back-end process, benchmarked against international leading technologies. Customized backside metal and thinning processes are offered to ensure high performance, cost-effectiveness, and enhanced product competitiveness.
Why Choose Us
Business Type: Trading Company
Main Products: Igbt
Year of Establishment: 2024-08-05
Address: No. 1519, Xinghai South Road, Zhuangshi Street, Zhenhai District, Ningbo City
Plant Area: 339.69 square meters
Registered Capital: 10,000,000 RMB
Main Markets: Western Europe
International Commercial Terms(Incoterms): EXW, FAS
Terms of Payment: LC, T/T, D/P, Western Union, Small-amount payment, Money Gram
Export Year: 2024-12-13
Nearest Port: Yantian Port, Shekou Port, Dachan Bay Port