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1200V IGBT Module Dgc40c120m2t

Price $50.00
Min Order 240 Pieces
Availability In Stock
Shipping From Jiangsu, China
Popularity 350 people viewed
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Model NO.:
DGC40C120M2T
Application:
Welding, UPS, Three-Leve Inverter
Batch Number:
2022
Manufacturing Technology:
Discrete Device
Material:
Metal-Oxide Semiconductor
Model:
Dgc40c120m2t
Package:
Module
Type:
N-Type Semiconductor
Voltage:
1200V
Current:
40A
Brand:
Wxdh
Trademark:
WXDH
Transport Package:
Econopack2
Origin:
Wuxi, China
HS Code:
8541290000
Product Description

 40A 1200V PIM in one-package

1 Description
These Insulated Gate Bipolar Transistor used advanced trench and
Fieldstop technology design, provided excellent VCEsat and switching
speed ,low gate charge. Which accords with the RoHS standard.
 
Features
Low gate charge
Excellent switching speed
Easy paralleling capability due to positive temperature
Coefficient in VCEsat
Tsc≥10μs
Fast recovery full current anti-parallel diode
Low VCEsat
Applications
Welding
UPS
Three-leve Inverter
AC to DC Converters
AC and DC servo drive amplifier
 
TypeVCEICVCEsat,Tj=25ºCTjopPackage
DGC40C120M2T1200V40A (Tj=100ºC)1.7V (Typ)150ºCEconOPACK2


Electrical Characteristics
5.1 Absolute Maximum Ratings (IGBT-inverter/IGBT-brake) (Tc=25ºC,unless otherwise specified)
PARAMETERSYMBOLVALUEUNIT
   
Collector-to-Emitter VoltageVCE1200V
Gate-to-Emitter VoltageVGE±30V
DC Collector currentIc Tj=25ºC80A
Tj=100ºC40A
Pulsed Collector Current #1ICM160A
 

5.2 Absolute Maximum Ratings (Diode-inverter) (Tc=25ºC,unless otherwise specified)
PARAMETERSYMBOLVALUEUNIT
   
Peak Repetitive Reverse VoltageVRRM1200V
DC Blocking VoltageVR1200V
Average Rectified Forward CurrentIF(AV)40A
Repetitive Peak Surge CurrentIFRM60A
Nonrepetitive Peak Surge Current(single) /tp=1.0msIFSM400A

5.3 Absolute Maximum Ratings (Diode-rectifier) (Tc=25ºC,unless otherwise specified)
PARAMETERSYMBOLVALUEUNIT
   
Peak Repetitive Reverse VoltageVRRM1600V
Reverse does not repeat peak voltage / IRRM=5μAVRSM2000V
Average Rectified Forward CurrentIF(AV)25A
Nonrepetitive Peak Surge Current(single) / tp=10msIFSM320A
I2t-value  / tp=10ms, sin 180°I2t512A2s

5.4 Absolute Maximum Ratings (Diode-brake) (Tc=25ºC,unless otherwise specified)
PARAMETERSYMBOLVALUEUNIT
   
Peak Repetitive Reverse VoltageVRRM1200V
DC Blocking VoltageVR1200V
Average Rectified Forward CurrentIF(AV)20A
Repetitive Peak Surge CurrentIFRM30A
Nonrepetitive Peak Surge Current(single) /tp=1.0msIFSM300A


5.5 IGBT Module
PARAMETERSYMBOLVALUEUNIT
   
Junction Temperature Range(inverter/brake)Tjmax-45~175ºC
Junction Temperature Range(Diode-rectifier)Tjmax-45~150ºC
Operating Junction TemperatureTjop-45~150ºC
Storage Temperature RangeTstg-45~150ºC
Isolation Voltage RMS,f=50Hz,t=1minVISO2500A




 
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