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30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2

Price $1.50
Min Order 5000 Pieces
Availability In Stock
Shipping From Jiangsu, China
Popularity 322 people viewed
Model NO.:
DGF30F65M2
Application:
Welding, UPS
Batch Number:
2023
Manufacturing Technology:
Discrete Device
Material:
Silicon
Model:
Dgf30f65m2
Package:
to-247
Type:
N-Type Semiconductor
Voltage:
650V
Current:
30A
Brand:
Wxdh
Trademark:
WXDH
Transport Package:
Tube
Origin:
Wuxi, China
HS Code:
8541290000
Product Description
PARAMETERSYMBOLRATINGUNIT
 
Collector-Emitter VoltageVCES650V
Gate- Emitter VoltageVGES±30V
Collector CurrentIC(TJ=25ºC)60A
Collector Current (TJ=100ºC)30A
Pulsed Collector CurrentICM180A
Diode Continuous Forward CurrentI@TJ = 100 °C30A
Diode Pulsed Current
IFM
180A
Total DissipationTC=25ºC
Ptot
60W
TC=100ºC
Ptot
30W
Junction TemperatureTj-45~175ºC
storage TemperatureTstg-45~150ºC
 
Features
FS Trench Technology, Positive temperature
coefficient
Low saturation voltage: VCE(sat), typ = 1.85V
@ IC =60A and Tj = 25°C
Extremely enhanced avalanche capability
Applications
Welding
Three-level inverter
UPS
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
DGF30F65M2
TO-220F
DGF30F65M2Pb-freeTube1000/box
 
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