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30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2

Price	$1.50
Min Order	5000 Pieces
Availability	In Stock
Shipping From	Jiangsu, China
Popularity	330 people viewed

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Jiangsu Donghai Semiconductor Co.,Ltd

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Profile certified by an independent inspection organization.

Jiangsu, China
Winnie Gao
Saleman

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Product Detail

Model NO.:

DGF30F65M2

Application:

Welding, UPS

Batch Number:

2023

Manufacturing Technology:

Discrete Device

Material:

Silicon

Model:

Dgf30f65m2

Package:

to-247

Type:

N-Type Semiconductor

Voltage:

650V

Current:

30A

Brand:

Wxdh

Trademark:

WXDH

Transport Package:

Tube

Origin:

Wuxi, China

HS Code:

8541290000

Product Description

PARAMETER		SYMBOL	RATING		UNIT

Collector-Emitter Voltage		V_CES	650		V
Gate- Emitter Voltage		V_GES	±30		V
Collector Current		I_C(TJ=25ºC)	60		A
Collector Current		(TJ=100ºC)	30		A
Pulsed Collector Current		I_CM	180		A
Diode Continuous Forward Current		I_F@TJ = 100 °C	30		A
Diode Pulsed Current		IFM	180		A
Total Dissipation	T_C=25ºC	Ptot	60		W
	T_C=100ºC	Ptot	30		W
Junction Temperature		T_j	-45~175		ºC
storage Temperature		T_stg	-45~150		ºC

Features

FS Trench Technology, Positive temperature

coefficient

Low saturation voltage: VCE(sat), typ = 1.85V

@ IC =60A and Tj = 25°C

Extremely enhanced avalanche capability

Applications

Welding

Three-level inverter

UPS

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
DGF30F65M2	TO-220F	DGF30F65M2	Pb-free	Tube	1000/box

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