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50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT G50t65lbbw
| Price | $1.50 |
|---|---|
| Min Order | 5000 Pieces |
| Availability | In Stock |
| Shipping From | Jiangsu, China |
| Popularity | 389 people viewed |
Model NO.:
G50T65LBBW
Application:
Welding, UPS
Batch Number:
2022
Manufacturing Technology:
Discrete Device
Material:
Silicon
Model:
G50t65lbbw
Package:
to-247
Type:
N-Type Semiconductor
Voltage:
650V
Current:
50A
Brand:
Wxdh
Trademark:
WXDH
Transport Package:
Tube
Origin:
Wuxi, China
HS Code:
8541290000
Product Description
| PARAMETER | SYMBOL | RATING | UNIT | ||
| Collector-Emitter Voltage | VCES | 650 | V | ||
| Gate- Emitter Voltage | VGES | ±20 | V | ||
| Collector Current | IC(T=25ºC) | 100 | A | ||
| Collector Current | (Tc=100ºC) | 50 | A | ||
| Pulsed Collector Current | ICM | 150 | A | ||
| Diode Continuous Forward Current | IF @TC = 100 °C | 20 | A | ||
| Diode Maximum Forward Current | IFM | 10 | A | ||
| Total Dissipation | TC=25ºC | PD | 417 | W | |
| TC=100ºC | PD | 208 | W | ||
| Junction Temperature | Tj | -55~175 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
50A 650V Trenchstop Insulated Gate Bipolar Transistor
Description
Using DongHai's proprietary Trench design and advance
FS technology, the 650V FS IGBT offers superior and
switching performances, high avalanche ruggedness
easy parallel operation
| Features |
| FS Trench Technology, Positive temperature coefficient |
| Low saturation voltage: VCE(sat), typ = 1.8V @ IC =50A and Tj = 25°C |
| Extremely enhanced avalanche capability |
| Applications |
| welding machine |
| Three-level Inverter |
| UPS |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| G50T65LBBW | TO-247 | G50T65LBBW | Pb-free | Tube | 300/box |
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