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50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT G50t65lbbw

Price $1.50
Min Order 5000 Pieces
Availability In Stock
Shipping From Jiangsu, China
Popularity 391 people viewed
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Model NO.:
G50T65LBBW
Application:
Welding, UPS
Batch Number:
2022
Manufacturing Technology:
Discrete Device
Material:
Silicon
Model:
G50t65lbbw
Package:
to-247
Type:
N-Type Semiconductor
Voltage:
650V
Current:
50A
Brand:
Wxdh
Trademark:
WXDH
Transport Package:
Tube
Origin:
Wuxi, China
HS Code:
8541290000
Product Description
PARAMETERSYMBOLRATINGUNIT
 
Collector-Emitter VoltageVCES650V
Gate- Emitter VoltageVGES±20V
Collector CurrentIC(T=25ºC)100A
Collector Current (Tc=100ºC)50A
Pulsed Collector CurrentICM150A
Diode Continuous Forward CurrentIF @TC = 100 °C20A
Diode Maximum Forward CurrentIFM10A
Total DissipationTC=25ºCPD417W
TC=100ºCPD208W
Junction TemperatureTj-55~175ºC
storage TemperatureTstg-55~150ºC
 
50A 650V Trenchstop Insulated Gate Bipolar Transistor
Description
Using DongHai's proprietary Trench design and advance
FS technology, the 650V FS IGBT offers superior and
switching performances, high avalanche ruggedness
easy parallel operation
 
Features
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 1.8V
@ IC =50A and Tj = 25°C
Extremely enhanced avalanche capability
Applications
welding machine
Three-level Inverter
UPS
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
G50T65LBBWTO-247G50T65LBBWPb-freeTube300/box
 
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