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MadeInChina.com > Products > Electrical & Electronics > Electronic Tube & Transistor > Rectifier Diode
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5MB10m MB10f MB10s Bridge 1kv 500mA to-269AA 4soic MB10m MB10f MB10s

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Min Order 10 Pieces
Availability In Stock
Shipping From Jiangsu, China
Popularity 293 people viewed
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Encapsulation Structure:
Plastic Sealed Transistor
Application:
Electronic Products
Certification:
RoHS, CE, ISO
Luminous Intensity:
Standard
Color:
Grey,Black
Structure:
Mbs,Mbm,DBS,dB,Wob,RS-2,Gbj2,Kbpc1,Kbp,Kbl,Gbj4
Material:
Silicon
Trademark:
ZG Brand
Transport Package:
by Sea, Packaging in Cartons
Specification:
MBS,MBM,DBS,DB,WOB,RS-2,GBJ2,KBPC1,KBP,KBL,GBJ4
Origin:
Anhui Province, China
HS Code:
8541100000
Product Description
Product Description

 

Detailed Photos

Certifications

Company Profile

 

Anhui Zhongxin Semiconductor Co., Ltd. was established in 2010 and covers an area of 20000 square meters, which is located in Anhui Province, near Shanghai. Our company is focus on the development and production of diode, rectifier diode, mosfet, schottky diode, fast recovery diode, bridge rectifier, silicon wafer, etc. Our mission is to be the most valuable semiconductor supplier beside you. Welcome to contact us for future business relationships and mutual success.
 SymbolsMB2MMB4MMB6MMB8MMB10MUnits
Maximum repetitive peak reverse
voltage		VRMM2004006008001000Volts
Maximum RMS voltageVRMS140280420560700Volts
Maximum DC blocking voltageVDC2004006008001000Volts
Maximum average forward rectified current at TA=30ºC On glass-epoxy
P.C.B. On aluminum substrate(Note 1,2)
IF(AV)
0.8
Amps
Peak Forward Surge Current 8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
IFSM
30.0
Amps
Maximum forward voltage at 0.4AVF1.1Volts
Maximum DC reverse current TA=25ºC
at rated DC blocking voltage TA=100ºC		IR5.0
100		μA
Typical junction capacitance per leg
(Note 3)		CJ15.0pF
Typical thermal resistance per legRθJA75.0ºC/W
Operating Temperature RangeTJ-55 to +150ºC
Storage Temperature RangeTSTG-55 to +150ºC
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