Menu
Global B2B sourcing platform
Verified suppliers and manufacturers

68A 1200V N-Channel Sic Power Mosfet Dcc080m120A to-247-3L

Price $1.50
Min Order 5000 Pieces
Availability In Stock
Shipping From Jiangsu, China
Popularity 383 people viewed
Model NO.:
DCC080M120A
Application:
Power Supplies
Batch Number:
2023
Manufacturing Technology:
Discrete Device
Material:
Sic
Model:
Dcc080m120A
Package:
to-247-3L
Signal Processing:
Other
Type:
N-Type Semiconductor
Voltage:
1200V
Current:
68A
Brand:
Wxdh
Trademark:
WXDH
Transport Package:
Tube
Origin:
Wuxi, China
HS Code:
8541290000
Product Description

 68A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required.
 
Features
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Applications
Power Supplies
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
Pulsed Power applications
 
PARAMETERSYMBOLTest ConditionsVALUEUNIT
   
Drian-to-Source VoltageVDSmaxVGS=0V, ID=100μA1200V
Gate-to-Source Voltage maxVGSmaxAbsolute maximum values-10/+25V
Gate-to-Source Voltage maxVGSSRecommended operational values-5/+20V
Continuous Drain CurrentID TC=25ºCVGS=20V,TC=25ºC36A
TC=100ºCVGS=20V,TC=100ºC24A
Pulsed Drain CurrentIDMPulse width tp limited by TJmax80A
Power Dissipation PtotTc=25ºC, TJ=150ºC192W
 PtotTc=25ºC, TJ=150ºCW
Junction Temperature RangeTj -55~150ºC
Storage Temperature RangeTstg -55~150ºC
 
4.2 Thermal Characteristics
ParameterSymbolRatingUnitº
Thermal Resistance,Junction to Case-sinkRthJC0.6ºC/W
Thermal Resistance,Junction to AmbientRthJA40ºC/W

Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
DCC080M120ATO-247-3LDCC080M120APb-freeTube300/box
DCCF080M120ATO-247-4LDCCF080M120APb-freeTube300/box
 
  • Similar Products
Full Page Contact Supplier