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MadeInChina.com > Products > Metallurgy, Mineral & Energy > Ceramic Material > Nitride Ceramics
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6inch 8inch 6" 8" Polished or Lapped Sides Aln Aluminum Nitride Wafer for Semiconductors Manufacturing

Price $100.00
Min Order 1 Piece
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Shipping From Fujian, China
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Application:
Aerospace, Electronics, Medical, Refractory
Type:
Ceramic Part
Size:
6" 8" 6inch 8inch
Color:
Gray
Main Content:
96%Aln, 97%Aln
Main Characteristics:
High Thermal Conductivity,Excellent Plasma Resista
Main Applications:
Heat Dissipating Parts,Plasma Resistance Parts
Bulk Density:
3.30
Vickers Hardness(Load 500g):
10.0
Compressive Strength:
2500
Young’ Modulus of Elasticity:
320
Poisson’s Ratio:
0.24
Specific Heat:
0.74
Volume Resistivity:
>=10-14
Dielectric Strength:
>=15
Loss Tangent:
5 *10-4
Trademark:
INNOVACERA
Transport Package:
Carton Packing
Specification:
Customized
Origin:
Fujian, China
Product Description
 

6inch 8inch 6" 8" Polished or Lapped Sides AlN Aluminum Nitride Wafer Substrates for Semiconductors Manufacturing

Aluminum Nitride Wafer Substrates play an essential role in the semiconductor industry. One of the key reasons for their popularity is their thermal profile, which closely matches that of silicon. This similarity makes AIN substrates an excellent choice for semiconductor applications where thermal management is critical. Innovacera, a leading provider of these substrates,offers Aluminum Nitride Wafer Substrates in various diameters, ranging from 2 inches to 8 inches, with the 6-inch and 8-inch sizes being the most commonly used.
 
Aluminum Nitride Features Include:
>High Thermal Conductivity
>High Electrical Insulation
>Low Dielectric Constant
>Mechanical Strength and Stability
>Corrosion Resistance
Chemical and Thermal Stability
The unique properties of Aluminum Nitride Wafer Substrates make them highly sought after in various semiconductor applications.
The substrates are particularly valued in:
>Power Electronics
>RF and Microwave Devices
>LED Manufacturing
>Wafer Bonding Technology


Aluminum Nitride Wafer Substrates are indispensable in the modern semiconductor industry, offering a combination of thermal conductivity, electrical insulation, and mechanical strength that few materials can match. Innovacera's range of Aluminum Nitride (AIN) wafers, available in various sizes and customized options, provide the reliability and performance necessary for high-demand applications. As the semiconductor industry continues to advance, the role of AIN substrates will only become more critical, ensuring that devices remain efficient, durable, and capable of meeting the ever-growing demands of technology.
 
 
Aluminium Nitride Material Properties
Material
ALN
Item No.
INC-AN180
INC-AN200
INC-AN220
Color
Gray
Gray
Beige
Main Content
96%ALN
96%ALN
97%ALN
Main Characteristics
High Thermal Conductivity,Excellent Plasma Resistance
Main Applications
Heat Dissipating Parts,Plasma Resistance Parts
Bulk Density
3.30
3.30
3.28
Water Absorption
0
0
0
Vickers Hardness(Load 500g)
10.0
9.5
9.
Flexural Strength
>=350
>=325
>=280
Compressive Strength
2500
2500
-
Young' Modulus of Elasticity
320
320
320
Poisson's Ratio
0.24
0.24
0.24
Fracture Toughness
-
-
-
Coefficient Linear Thermal Expansion
40-400degree
4.8
4.6
4.5
Thermal Conductivity
20degree
180
200
220
Specific Heat
0.74
0.74
0.76
Thermal Shocking Resistance
-
-
-
Volume Resistivity
20degree
>=10-14
>=10-14
>=10-13
Dielectric Strength
>=15
>=15
>=15
Dielectric Constant
1MHz
9
8.8
8.6
Loss Tangent
*10-4
5
5
6

 
 
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