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75A/1200V E75 IGBT Module Replace Infineon Fp75r12kt4

Price $68.00
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Model NO.:
WGL75P120E75
Key Material:
Sic
Manufacturing Technology:
Integrated Circuits Device
Material:
Compound Semiconductor
Type:
Intrinsic Semiconductor
Package:
MCM
Signal Processing:
Digital
Application:
Inverter
Model:
Wgl75p120e75
Batch Number:
2021+
Brand:
Cetc
Transport Package:
Carton
Specification:
L122.5*W62.5mm
Origin:
Cn
HS Code:
8504409190
Product Description
Product Photo:


Product parameter :
 
Parametersymbolconditionsvalue
unit
 
Collector-Emitter VoltageVCESVGE=0V, IC =1mA, Tvj=25ºC1200V
Continuous Collector CurrentICTc=80ºC, Tvjmax=175ºC75A
Peak Collector CurrentICRMtp=1ms150A
Gate-Emitter VoltageVGESTvj=25ºC±20V
Total Power Dissipation (IGBT-inverter) PtotTc=25ºC
Tvjmax=175ºC		476W



Features
  • Low inductance case
  • Low switching losses
  • Integrated NTC temperature sensor
  • Isolated baseplate
  • Including fast & soft recovery anti-parallel FWD
  • High short circuit capability(10us)
  • Low inductance module structure
  • Maximum junction temperature 175ºC
Benefits
  • Higher inverter output current for the same frame size
  • Reduced system costs by simplification of the inverter systems
  • Easy and most reliable assembly
  • High inter-connection reliability
  • suitable for press-in & soldering process

Applications

  • Commercial, construction and agricultural vehicles (CAV)
  • Motor control and drives
  • Solutions for solar energy systems
  • Uninterruptible Power Supply (UPS)
  • Soft switching welding machine
  • AC and DC servo drive amplifier
E75 IGBT module is one of the most popular IGBT packages worldwide and is used in many different applications, such as General Purpose Drives; Commercial, Construction and Agricultural Vehicles as well as eBus; Solar; Wind; Traction; UPS and finally, Transmission and Distribution. In the latest module generation it is now feasible to increase the module current to 150 A. This is possible through the new  technology enabling a higher power density and reduced BoM costs.

Circuit Diagram


Package drawing



E75 Series  products:
 
ModelVces(V)Ic(T=80)(A)VCE(sat) Tj=125ºCEon+Eof(Tj=125)(mj)Rthjc(KW)
WGL50F120E751200501.8511.880.41
WGL75F120E751200751.8515.960.33
WGL100F120E7512001001.8517.480.20
WGL150F120E7512001501.8534.20.17



FAQ:
1.Why is the IGBT specified for 175ºC overload?

The CETC IGBT  is developed to operate at a continuous temperature of 175°C. The overload limitation is given by the package. Most of the applications are designed with an overload profile and here the IGBT is the perfect fit. The CETC IGBT provides the lowest static losses.


2.How to handle the high gate charge specified for IGBT datasheet?

The specified gate charge in the datasheet is for an operation with VGE of ± 20 V. Most customers use VGE in the range of +5.4 V to +7 V. Here the gate charge is much lower and with this value, typical switching frequencies can be addressed with standard drives.

3.Technical Support

In order to enable us to process your inquiry as efficiently as possible and ensure your case is duly reported, we kindly ask you to submit your request via our service team.
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