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99.7% Alumina Wafer Polishing Plate for Chemical Mechanical Polishing
| Price | $5000.00 |
|---|---|
| Min Order | 1 Piece |
| Availability | In Stock |
| Shipping From | Jiangxi, China |
| Popularity | 382 people viewed |
Model NO.:
Alumina Ceramic Wafer Polishing Plate
Type:
Disc Grinder
Power Source:
Chemical Mechanical Polishing
Object:
Wafer
Application:
Semiconductor
Disc(Wheel) Type:
Polishing Plate
Material:
Alumina Ceramics
Working Style:
Chemical Mechanical Polishing
Disc Diameter:
Within 850mm
Trademark:
Chemshun Ceramics
Transport Package:
Carton and Wooden Box
Specification:
size below ∅ 850mm, thickness 45mm.
Origin:
China
HS Code:
6909191200
Product Description
99.7% Alumina Wafer Polishing Plate for Chemical Mechanical Polishing (CMP)
99.7% Alumina Wafer Polishing Plate / Turn Table
>>> Application:
Chemshun Ceramics 99.7% Alumina Wafer Polishing Plate for Chemical Mechanical Polishing. As an important component of CMP chemical mechanical polishing process. CMP is the necessary for producing process of the sapphire and Wafer of the semiconductors.
Chemshun Ceramics' high purity 99.7 % alumina ceramics sapphire polishing and lapping plates, Disc are shaped as PIBM producing process. Its an internaltional advanced technology. PIBM sucessful solve the key problem of crack and deformation of large size alumina ceramics.PIBM technology will open another window of fine ceramics.
>>> The Process Photo of CMP:
>>> Features of Chemshun Ceramics 997 Alumina Ceramic Polishing Plate :
High Purity Alumina
High rigidity (Hardness, Mechanical Strength, Flexural Strength, Wear Resistance)
High chemical durability
Surface shape & roughness control
For Wide Variation of wafer size & Thickness
Ability to Resist the Severe Microchip-processing equipment environment
High Quality & Pretty Price Compare to Japane Alumina Polishing Plate
>>> Size:
Disc, ring size below ∅850mm, thickness 45mm.
For example: D150mm, D360mm,D 600mm.
Customized products with various size are accepted.
>>> Main Parameter :
99.7% Alumina Wafer Polishing Plate / Turn Table
>>> Application:
Chemshun Ceramics 99.7% Alumina Wafer Polishing Plate for Chemical Mechanical Polishing. As an important component of CMP chemical mechanical polishing process. CMP is the necessary for producing process of the sapphire and Wafer of the semiconductors.
Chemshun Ceramics' high purity 99.7 % alumina ceramics sapphire polishing and lapping plates, Disc are shaped as PIBM producing process. Its an internaltional advanced technology. PIBM sucessful solve the key problem of crack and deformation of large size alumina ceramics.PIBM technology will open another window of fine ceramics.
>>> The Process Photo of CMP:
>>> Features of Chemshun Ceramics 997 Alumina Ceramic Polishing Plate :
High Purity Alumina
High rigidity (Hardness, Mechanical Strength, Flexural Strength, Wear Resistance)
High chemical durability
Surface shape & roughness control
For Wide Variation of wafer size & Thickness
Ability to Resist the Severe Microchip-processing equipment environment
High Quality & Pretty Price Compare to Japane Alumina Polishing Plate
>>> Size:
Disc, ring size below ∅850mm, thickness 45mm.
For example: D150mm, D360mm,D 600mm.
Customized products with various size are accepted.
>>> Main Parameter :
| Unit | Chemshun 99.7 Alumina Ceramics | ||
| General Properties | Al2O3 content | wt% | 99.7-99.9 |
| Density | gm/cc | 3.94-3.97 | |
| Color | - | Ivory | |
| Water absorption | % | 0 | |
| Mechanical Properties | Flexural Strength(MOR) 20 ºC | Mpa(psix10^3) | 440-550 |
| Elastic Modulus 20ºC | GPa (psix10^6) | 375 | |
| Vickers Hardness | Gpa(kg/mm2) R45N | >=17 | |
| Bending Strength | Gpa | 390 | |
| Tensile Strength 25ºC | MPa(psix10^3) | 248 | |
| Fracture Toughness (K I c) | Mpa* m^1/2 | 4-5 | |
| Thermal Properities | Thermal conductivity(20ºC) | W/mk | 30 |
| Coefficient of Thermal expansion(25-1000ºC) | 1x 10^-6/ºC | 7.6 | |
| Thermal Shock Resistance | ºC | 200 | |
| Maximum use temperature | ºC | 1700 | |
| Electrical Properities | Dielectric Strength (1MHz) | ac-kv/mm(ac v/mil) | 8.7 |
| Dielectric Constant(1 MHz) | 25ºC | 9.7 | |
| Volume Resistivity | ohm-cm (25ºC) | >10^14 | |
| ohm-cm (500ºC) | 2x10^12 | ||
| ohm-cm (1000ºC) | 2x10^7 |
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