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Advanced 6h P-Type 3c N-Type Silicon Carbide Wafer for Semiconductor Applications
| Price | $2300.00 |
|---|---|
| Min Order | 3 piece |
| Availability | In Stock |
| Shipping From | Zhejiang, China |
| Popularity | 356 people viewed |
Model NO.:
2~4inch 3C N-type
Application:
Diode, Power Electronic Components
Batch Number:
2023+
Certification:
CCC, CE, RoHS
Manufacturing Technology:
Pvt
Material:
3c-Sic Powder
Diameter:
6inch
Hickness:
350±25μm
Poly Type:
4h/6h/3c
Resistivity:
0.06~0.11 ≤0.1 Ωcm
Trademark:
HC
Specification:
4Inch
Origin:
China
HS Code:
2804611900
Product Description
4-inch 3C N-type silicon carbide substrate product introduction 3C N-type SiC has higher electron mobility (3C-SiC, 1100 cm2/V.s; 4H-SiC, 900 cm2/V.s). At the same time, because 3C-SiC has a smaller bandgap, the device can have a smaller FN tunneling current and reliability in the oxide layer preparation, which can greatly improve the device product yield.
Main indicators Crystal type: 3C
Size: 50.8±0.38 mm
Thickness: 350±25μm
Microtube density: <0.1 cm-2
Resistivity ≤0.0006 Ω.cm..
Q1: What's the way of shipping ?
A: We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A: T/T, PayPal and etc..
Q3: What's the deliver time?
A: For inventory: the delivery time is 10 workdays. For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
A: Yes, we can customize the specifications according to your needs.
Q5: How to guarantee the quality of your products?
A: Strict detection during production.Strict sampling inspection on products before shipment and intact product packaging ensured.
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