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Ash Content ≤ 5ppm Isostatic Graphite Products for Silicon Crystal Growth
| Price | $10.00 |
|---|---|
| Min Order | 1 Piece |
| Availability | In Stock |
| Shipping From | Zhejiang, China |
| Popularity | 502 people viewed |
Carbon Content:
High-Carbon
Composition:
C
Crystal Morphology:
Artificial Graphite
Forming Way:
Isostatic Graphite
Grade:
HP
Type:
Graphite Crucible
Trademark:
SIAMC
Transport Package:
Wooden Case
Specification:
12 inch
Origin:
China
HS Code:
681519
Product Description
SIAMC's high-purity thermal field materials play a crucial role in the manufacturing of silicon semiconductor single crystal furnaces. SIAMC can produce large-size thermal field materials of 36 inches or more, with graphite purity reaching as high as 5 ppm. The thermal field materials include graphite components, carbon-carbon components, and insulation materials. Graphite components can also be coated with PyC or SiC coatings according to process requirements.
SIAMC's thermal field materials are of exceptional quality, meeting the high standards demanded by users in the integrated circuit industry. Our materials are carefully engineered to ensure optimal performance and reliability, and are trusted by manufacturers to produce high-quality, defect-free single crystal silicon ingots.
SIAMC's thermal field materials are of exceptional quality, meeting the high standards demanded by users in the integrated circuit industry. Our materials are carefully engineered to ensure optimal performance and reliability, and are trusted by manufacturers to produce high-quality, defect-free single crystal silicon ingots.
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