Menu
Suppliers Products
Global B2B sourcing platform
Verified suppliers and manufacturers
MadeInChina.com > Products > Electrical & Electronics > Electronic Tube & Transistor > Other Electronic Tubes & Transistors
Swipe or use the arrows to view product images.

Battery Protection DC-DC Convertor To220 Sfg100n08PF Vds-80V ID-300A RDS (ON) -6.5milliohm Qg-53.2nc N-Channel Power Mosfet

Price $0.60
Min Order 1000 Pieces
Availability In Stock
Shipping From Shanghai, China
Popularity 396 people viewed
Send Inquiry View Full Page
Model NO.:
TO220 SFG100N08PF
Certification:
RoHS, ISO
Shape:
ST
Shielding Type:
Sharp Cutoff Shielding Tube
Cooling Method:
Air Cooled Tube
Function:
Microwave Transistor
Working Frequency:
High Frequency
Structure:
Planar
Encapsulation Structure:
Chip Transistor
Power Level:
High Power
Material:
Silicon
Trademark:
Orientalsemi
Transport Package:
Carton
Specification:
35.3x30x37.5/60x23x13
Origin:
China
HS Code:
8541290000
Product Description

General Description
SFGMOS®  MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The high Vth series is specially optimized for high systems with gate driving voltage greater than 10V.
 

Features
     Low RDS(ON) & FOM
     Extremely low switching loss
     Excellent stability and uniformity
     Fast switching and soft recovery

Applications
     Switched mode power supply
     Motor driver
     Battery protection
     DC-DC convertor
     Solar inverter
     UPS and energy inverter


Key Performance Parameters
ParameterValueUnit
VDS, min @ Tj(max)80V
ID, pulse300A
RDS(ON), max @ VGS =10V6.5mΩ
Qg53.2nC


Absolute Maximum Ratings at Tj =25°C unless otherwise noted
ParameterSymbolValueUnit
Drain source voltageVDS80V
Gate source voltageVGS±20V
Continuous drain current1) , TC=25 °CID100A
Pulsed drain current2) , TC=25 °CID, pulse300A
Continuous diode forward current1) , TC=25 °CIS100A
Diode pulsed current2) , TC=25 °CIS, pulse300A
Power dissipation3) , TC=25 °CPD148W
Single pulsed avalanche energy5)EAS135mJ
Operation and storage temperatureTstg ,Tj-55 to 150°C


Thermal Characteristics
ParameterSymbolValueUnit
Thermal resistance, junction-caseRθJC0.84°C/W
Thermal resistance, junction-ambient4)RθJA62°C/W


Electrical Characteristics at Tj =25°C unless otherwise specified
ParameterSymbolMin.Typ.Max.UnitTest condition
Drain-source         breakdown voltageBVDSS80  VVGS =0 V, ID =250 μA
Gate threshold
voltage		VGS(th)2.0 4.0VVDS =VGS , ID =250 μA
Drain-source
on-state resistance		RDS(ON) 66.5mΩVGS =10 V, ID=12 A
Gate-source
leakage current
IGSS		  100
nA		VGS =20 V
  - 100VGS =-20 V
Drain-source
leakage current		IDSS  1μAVDS =80 V, VGS =0 V
Gate resistanceRG 3.1 Ωƒ=1 MHz, Open drain


Note
1)   Calculated continuous current based on maximum allowable junction temperature.
2)   Repetitive rating; pulse width limited by max. junction temperature.
3)   Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj =25 °C.

 
Ordering Information
 
Package
Type		Units/
Tube		Tubes/  Inner BoxUnits/   Inner BoxInner Boxes/ Carton BoxUnits/     Carton Box
TO220-J5020100055000


Product Information
 
ProductPackagePb FreeRoHSHalogen Free
SFG100N08PFTO220yesyesyes


Supply Chain



Green Product Declaration

  • Similar Products
Full Page Contact Supplier
↑