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Hall Effect Sensor (AH3663) Hall Switch Magnetic Sensor Unipolar Sensor Position Sensor

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Min Order 500 Pieces
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Shipping From Jiangsu, China
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Model NO.:
AH3663
Type:
Magnetic Displacement Sensor
Output Signal Type:
Analog Type
Production Process:
SemiConductor Integrated
Material:
Mixture
Certification:
RoHS
Customized:
Non-Customized
Output:
Analog Sensor
Usage:
Position Sensor, Liquid Level Sensor, Speed Sensor
Theory:
Magnetic Sensor
Trademark:
AHNJ
Transport Package:
Carton
Specification:
ROHS, REACH
Origin:
Nanjing, China
HS Code:
8542319099
Product Description
Features 

Micropower designing.
Rated supply voltage  2.4 V ~ 5.5 V;
Omnipolar operating, no "N" or "S" pole in excitation magnetic field, high magnetic sensitivity, highly symmetry in positive and negative magnetic switch point.
Built-in dynamic imbalance voltage compensition circuit, high temperature stability, Small temperature drift in switch point, resistant to mechanical stress and thermal stress, the power consumption is only 8μW when the power supply is 2.75V.
Products meet the EU RoHS instruction 2011/65 / EU and REACH regulations 1907/2006 / EU requirements

Outline
AH3663 is a kind of high sensitivity omnipolar micropower Hall sensor. The special designing circuit enable the sensor has omnipolar (no "S" or "N" pole) magnetic field excitation function, excellendt positive and negative switch symmetry, and bitty average powr consumption current. When the magnet (no "S" or "N" pole) is closed to sensor(∣B∣≥∣Bop∣),the sensor outputs low level; when the magnet is far away from sensor ∣B∣≤∣Brp∣), the sensor outputs high level. Stable Hysteresis(Bhx =∣Bopx- Brpx∣)ensure the sensor's stable switch status, the sensor's magnetic and electric transfer characteristic curve is shown as the figure:The sensor chip has voltage regulators, Hall-voltage generator, dynamic imbalance voltage compensator, temperature compensator, awake/sleep controller, differential amplifier, Schmitt trigger, logic controler and open collector output driver circuit unit etc.

Sleep Period
 The chip has built-in awake/sleep clock control circuit, and its awake/sleep period time is shown in the figure.Limit Parameter
ParametersymbolMin.Max.Unit
Storage Temp.Ts-55150ºC
Supply VoltageVCC2.47V
Permitted Power consumption  pd-300mW
Magnetic InductionBunlimitedunlimitedmT
Output CurrentIO-5mA
 
Electrostatic Grade
Under human being mode, the Electrostatic compression is large than ±6kV.

Operating Condition
ParameterSymbolMin.Max.Unit
Supply VoltageVCC2.45.5V
Operating Temp.Ta-4085ºC
Output CurrentIO-5mA
 

Electrical Characteristc
ParamaterSymbolTest ConditionTyp.MaxUnit 
Output Low Level VOLVCC1= VCC2=2.75V, IO=1mA,B≥BOP0.10.25V 
Awake power consumption current IAWKAwake,VCC1=2.75V,Vo Open circuit 3    5  mA
Sleep power powr consumption current ISLPSleep,VCC1=2.75V,Vo Open circuit24μA 
Average Power Consumption Current IAVGVCC1=2.75V,Vo Open circuit69μA 
Awake TimetAWVVCC1= 4V,RL=200Ω,Vo Open circuit125150μs 
PeriodtPVCC1= 4V,RL=200Ω,Vo Open circuit6080ms 
Duty FactorfdVCC1= 4V,RL=200Ω,Vo Open circuit0.1-% 
         
 
 
Magnetic Characteristic
Test condition:VCC1 = VCC2 =2.75V,IO = 1 mA
Parameter SymbolMin.Typ.Max.
S pole Operate PointBOPS-34
N Pole Operate PointBOPN-4-3-
S Pole Release PointBRPS0.51.5-
N Pole Release PointBRPN--1.5-0.5
Hysteresis
∣BOPX - BRPX∣		BHX-12
 
 
Note 1: Unit is mT, 1mT=10Gs
Note2:  When the "S" Pole of the magnetic field is vertical to the front mark of product, we call the magnetic field B>0.
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