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Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D
| Price | $1.50 |
|---|---|
| Min Order | 5000 Pieces |
| Availability | In Stock |
| Shipping From | Jiangsu, China |
| Popularity | 364 people viewed |
Model NO.:
DHG50T65D
Application:
Welding, UPS
Batch Number:
2022
Certification:
RoHS
Manufacturing Technology:
Discrete Device
Material:
Silicon
Model:
Dhg50t65D
Package:
to-3pn
Type:
N-Type Semiconductor
Voltage:
650V
Currency:
50A
Manufacturing Technology:
Discrete Device
Type:
N-Type Semiconductor
Material:
Silicon
Package:
to-3pn
Application:
Welding, UPS
Model:
Dhg50t65D
Batch Number:
2022
Brand:
Wxdh
Trademark:
WXDH
Transport Package:
Tube
Origin:
Wuxi, China
HS Code:
8541290000
Product Description
| PARAMETER | SYMBOL | RATING | UNIT | ||
| Collector-Emitter Voltage | VCES | 650 | V | ||
| Gate- Emitter Voltage | VGES | ±20 | V | ||
| Collector Current | IC(T=25ºC) | 100 | A | ||
| Collector Current | (Tc=100ºC) | 50 | A | ||
| Pulsed Collector Current | ICM | 150 | A | ||
| Diode Continuous Forward Current | IF @TC = 100 °C | 25 | A | ||
| Diode Maximum Forward Current | IFM | 125 | A | ||
| Total Dissipation | TC=25ºC | PD | 280 | W | |
| TC=100ºC | PD | 110 | W | ||
| Junction Temperature | Tj | 150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
50A 650V Trenchstop Insulated Gate Bipolar Transistor
Description
Using DongHai's proprietary Trench design and advance
FS technology, the 650V FS IGBT offers superior and
switching performances, high avalanche ruggedness
easy parallel operation
| Features |
| FS Trench Technology, Positive temperature coefficient |
| Low saturation voltage: VCE(sat),TYP=1.9V @IC=50A,VGE=15V |
| Extremely enhanced avalanche capability |
| Applications |
| welding machine |
| Solar inverter |
| UPS |
| Medium and high switching frequency inverter |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| G50T65D | TO-3PN | G50T65D | Pb-free | Tube | 300/box |
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