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Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D

Price $1.50
Min Order 5000 Pieces
Availability In Stock
Shipping From Jiangsu, China
Popularity 368 people viewed
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Model NO.:
DHG50T65D
Application:
Welding, UPS
Batch Number:
2022
Certification:
RoHS
Manufacturing Technology:
Discrete Device
Material:
Silicon
Model:
Dhg50t65D
Package:
to-3pn
Type:
N-Type Semiconductor
Voltage:
650V
Currency:
50A
Manufacturing Technology:
Discrete Device
Type:
N-Type Semiconductor
Material:
Silicon
Package:
to-3pn
Application:
Welding, UPS
Model:
Dhg50t65D
Batch Number:
2022
Brand:
Wxdh
Trademark:
WXDH
Transport Package:
Tube
Origin:
Wuxi, China
HS Code:
8541290000
Product Description
PARAMETERSYMBOLRATINGUNIT
 
Collector-Emitter VoltageVCES650V
Gate- Emitter VoltageVGES±20V
Collector CurrentIC(T=25ºC)100A
Collector Current (Tc=100ºC)50A
Pulsed Collector CurrentICM150A
Diode Continuous Forward CurrentIF @TC = 100 °C25A
Diode Maximum Forward CurrentIFM125A
Total DissipationTC=25ºCPD280W
TC=100ºCPD110W
Junction TemperatureTj150ºC
storage TemperatureTstg-55~150ºC
 
50A 650V Trenchstop Insulated Gate Bipolar Transistor
Description
Using DongHai's proprietary Trench design and advance
FS technology, the 650V FS IGBT offers superior and
switching performances, high avalanche ruggedness
easy parallel operation
 
Features
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat),TYP=1.9V @IC=50A,VGE=15V
Extremely enhanced avalanche capability
Applications
welding machine
Solar inverter
UPS
Medium and high switching frequency inverter
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
G50T65DTO-3PNG50T65DPb-freeTube300/box
 
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