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Insulated Gate Bipolar Transistor IGBT G40t60d to-3pn

Price Negotiable
Min Order 1800 Pieces
Availability In Stock
Shipping From Jiangsu, China
Popularity 242 people viewed
Model NO.:
G40T60D
Manufacturing Technology:
Discrete Device
Type:
N-type Semiconductor
Material:
Silicon
Package:
to-3pn
Application:
Aircondition, Weldin, UPS
Model:
G40t60d
Batch Number:
2021
Brand:
Wxdh
Trademark:
WXDH
Transport Package:
Tube
Origin:
Wuxi, China
HS Code:
8541290000
Product Description
PARAMETERSYMBOLRATINGUNIT
 
Collector-Emitter VoltageVCES600V
Gate- Emitter VoltageVGES±20V
Collector CurrentIC(T=25ºC)80A
Collector Current (Tc=100ºC)40A
Pulsed Collector CurrentICM120A
Diode Continuous Forward CurrentI@TC = 100 °C20A
Diode Maximum Forward CurrentIFM100A
Total DissipationTC=25ºCPD280W
TC=100ºCPD110W
Junction TemperatureTj150ºC
storage TemperatureTstg-55~150ºC
 
Features
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 1.8V
@ IC =40A and VGE=25V
Applications
welding
Aircondition
UPS
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
G40T60DTO-3PNG40T60DPb-freeTube300/box
 
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