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Insulated Gate Bipolar Transistor IGBT G60n65D to-247 **%off

Price	$1.50
Min Order	5000 Pieces
Availability	In Stock
Shipping From	Jiangsu, China
Popularity	516 people viewed

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Jiangsu Donghai Semiconductor Co.,Ltd

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Jiangsu, China
Winnie Gao
Saleman

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Product Detail

Model NO.:

G60N65D

Voltage:

650V

Currency:

60A

Manufacturing Technology:

Discrete Device

Type:

N-type Semiconductor

Material:

Silicon

Package:

to-3pn

Application:

Inverter Welding Machine, UPS

Model:

G60n65D

Batch Number:

2021

Brand:

Wxdh

Trademark:

WXDH

Transport Package:

Tube

Origin:

Wuxi, China

HS Code:

8541290000

Product Description

PARAMETER		SYMBOL	RATING		UNIT

Collector-Emitter Voltage		V_CES	600		V
Gate- Emitter Voltage		V_GES	±20		V
Collector Current		I_C(T=25ºC)	120		A
Collector Current		(Tc=100ºC)	60		A
Pulsed Collector Current		I_CM	180		A
Diode Continuous Forward Current		I_F@TC = 100 °C	30		A
Diode Maximum Forward Current		I_FM	100		A
Total Dissipation	T_C=25ºC	P_D	300		W
	T_C=100ºC	P_D	120		W
Junction Temperature		T_j	150		ºC
storage Temperature		T_stg	-55~150		ºC

Features

FS Trench Technology, Positive temperature coefficient

Low saturation voltage: V_CE(sat), typ = 2.2V
@ I_C=60A and V_GE=15V

Mainly used in inverter welding machine, suitable for working frequency < 60kHz.

Applications

Inverter welding machine

Solar inverter

UPS

Medium and high switching frequency inverter

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
G60T65D	TO-3PN	G60T65D	Pb-free	Tube	300/box

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