Ncep10n12K Nce N-Channel Super Trench II Power Mosfet

NCE offers N-Channel SGT-II series power MOSFETs with breakdown voltage ratings ranging from 30V to 120V. The ultra-low on-resistance ( _RDS(on)) and ultra-low gate charge ( _Qg ) features of the products, combined with advanced lightweight and compact packages, further increase the power density and energy conversion efficiency of the system. Meanwhile, for low-frequency applications with extremely demanding performance and robustness requirements, NCE N-channel SGT-II series products further optimize the high-current shutdown capability and electrostatic protection, which can satisfy a wide range of applications, including DC motor drive, Li-ion battery protection, and AC/DC synchronous rectification. In addition, compared with the previous generation of SGT-I series, SGT-II series features 20% lower on-resistance Ron _,sp and 20% lower FOM, which provides a better choice for designers to further improve system efficiency.

N-channel SGT-II series power MOSFET package range includes TO-220, TO-252, TO-247, TO-263, TO-251, TOLL, DFN5*6, DFN3*3, SOP-8 and other packages, providing designers with more flexible options for customization.

Note: SGT MOSFETs are also known as Super Trench MOSFETs.