Swipe or use the arrows to view product images.
Sic Diode To247 Ost80n65hewf Vces-650V Maximum Junction Temperature175, IC, Pulse-320A Vce (sat) -1.45V Qg-168nc Power IGBT
| Price | $1.20 |
|---|---|
| Min Order | 450 Pieces |
| Availability | In Stock |
| Shipping From | Shanghai, China |
| Popularity | 341 people viewed |
Model NO.:
IGBT-Sic Diode TO247 OST80N65HEWF
Certification:
RoHS, ISO
Shape:
ST
Shielding Type:
Sharp Cutoff Shielding Tube
Cooling Method:
Air Cooled Tube
Function:
Switch Transistor
Working Frequency:
High Frequency
Structure:
Diffusion
Encapsulation Structure:
Chip Transistor
Power Level:
High Power
Material:
Silicon
Trademark:
Orientalsemi
Transport Package:
Carton
Origin:
China
HS Code:
8541290000
Product Description
General Description
OST80N65HEWF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.
Features
Advanced TGBTTM technology
Excellent conduction and switching loss
Excellent stability and uniformity
Fast and soft antiparallel SiC diode
Applications
Induction converters
Uninterruptible power supplies
Key Performance Parameters
| Parameter | Value | Unit |
| VCES, min @ 25 °C | 650 | V |
| Maximum junction temperature | 175 | °C |
| IC, pulse | 320 | A |
| VCE(sat), typ @ VGE=15 V | 1.5 | V |
| Qg | 168 | nC |
Absolute Maximum Ratings at Tvj=25 °C unless otherwise noted
| Parameter | Symbol | Value | Unit |
| Collector emitter voltage | VCES | 650 | V |
| Gate emitter voltage | VGES | ±20 | V |
| Transient gate emitter voltage, TP≤10 µs, D<0.01 | ±30 | V | |
| Continuous collector current1) , TC=25 °C | IC | 114 | A |
| Continuous collector current1) , TC=100 °C | 80 | A | |
| Pulsed collector current2) , TC=25 °C | IC, pulse | 320 | A |
| Diode forward current1) , TC=25 °C | IF | 114 | A |
| Diode forward current1) , TC=100 °C | 80 | A | |
| Diode pulsed current2) , TC=25 °C | IF, pulse | 320 | A |
| Power dissipation3) , TC=25 °C | PD | 395 | W |
| Power dissipation3) , TC=100 °C | 198 | W | |
| Operation and storage temperature | Tstg, Tvj | -55 to 175 | °C |
| Short circuit withstand time VGE =15 V, VCC≤400 V Allowed number of short circuits<1000 Time between short circuits:≥1.0 S Tvj =150 °C | SC | 5 | μs |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| IGBT thermal resistance, junction-case | RθJC | 0.38 | °C/W |
| Diode thermal resistance, junction-case | RθJC | 0.65 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 40 | °C/W |
Electrical Characteristics at Tvj=25 °C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Collector-emitter breakdown voltage | V(BR)CES | 650 | V | VGE =0 V, IC =0.5 mA | ||
Collector-emitter saturation voltage | VCE(sat) | 1.5 | 1.8 | V | VGE =15 V, IC=80 A Tvj=25 °C | |
| 1.7 | V | VGE =15 V, IC=80 A, Tvj=125 °C | ||||
| 1.85 | VGE =15 V, IC=80 A, Tvj=175 °C | |||||
| Gate-emitter threshold voltage | VGE(th) | 3.5 | 4.5 | 5.5 | V | VCE =VGE , ID =0.5 mA |
Diode forward voltage | VF | 2.0 | V | VGE =0 V, IF =40 A Tvj=25 °C | ||
| 2.2 | VGE =0 V, IF =40 A, Tvj=125 °C | |||||
| 2.6 | VGE =0 V, IF =40 A, Tvj=175 °C | |||||
| Gate-emitter leakage current | IGES | 100 | nA | VCE =0 V, VGE=20 V | ||
| Zero gate voltage collector current | ICES | 50 | μA | VCE =650 V, VGE =0 V |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 168 | nC | VGE =15 V, VCC=520 V, IC=80 A | ||
| Gate-emitter charge | Qge | 74 | nC | |||
| Gate-collector charge | Qgc | 30 | nC |
Body Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode reverse recovery time | trr | 41 | ns | VR=400 V, IF=80 A, diF/dt=500 A/μs | ||
| Diode reverse recovery charge | Qrr | 141 | nC | |||
| Diode peak reverse recovery current | Irrm | 7 | A |
Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
Ordering Information
| Package Type | Units/ Tube | Tubes/ Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
| TO247-P | 30 | 15 | 450 | 4 | 1800 |
Product Information
| Product | Package | Pb Free | RoHS | Halogen Free |
| OST80N65HEWF | TO247 | yes | yes | yes |
Green Product Declaration
- Similar Products
$1800.00
1 Piece (MOQ)
Triode Itl5-1 for High Frequency Generator for Heating
Beijing Jenerator Electronic Co.,Ltd
$7000.00
1 Piece (MOQ)
Power Grid Tube Yd1212 for Linear Accelarator
Beijing Jenerator Electronic Co.,Ltd
$1.30
1000 Pieces (MOQ)
To220f Osg55r190FF Vds-600V ID-60A N-Channel Power Mosfet
Shanghai Winture Electric Co., Ltd.
$2.00
10 Pieces (MOQ)
2sk2313 K2313 MOS Transistor Original 2313 Mosfet
Shenzhen Jin Da Peng Technology Co., Ltd.