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Switching Voltage Regulator To252 Sfg10s20df Vds-100V ID-90A N-Channel Power Mosfet
| Price | $1.10 |
|---|---|
| Min Order | 2500 Pieces |
| Availability | In Stock |
| Shipping From | Shanghai, China |
| Popularity | 525 people viewed |
Model NO.:
TO252 SFG10S20DF
Certification:
RoHS, ISO
Shape:
ST
Shielding Type:
Sharp Cutoff Shielding Tube
Cooling Method:
Air Cooled Tube
Function:
Switch Transistor
Working Frequency:
High Frequency
Structure:
Diffusion
Encapsulation Structure:
Chip Transistor
Power Level:
High Power
Material:
Silicon
Trademark:
Orientalsemi
Transport Package:
Carton
Specification:
35 x 30 x 37 CM
Origin:
China
HS Code:
8541290000
Product Description
General Description
SFGMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics . The low Vth series is specially designed to use in synchronous rectification power systems with low driving voltage.
FeaturesLow RDS(ON) & FOM
Extremely low switching loss
Excellent stability and uniformity
Fast switching and soft recovery
Applications
PD charger
Motor driver
Switching voltage regulator
DC-DC convertor
Switched mode power supply
Key Performance Parameters
| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 100 | V |
| ID, pulse | 90 | A |
| RDS(ON) , max @ VGS=10V | 20 | mΩ |
| Qg | 16.2 | nC |
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
| Parameter | Symbol | Value | Unit |
| Drain source voltage | VDS | 100 | V |
| Gate source voltage | VGS | ±20 | V |
| Continuous drain current1) , TC=25 °C | ID | 30 | A |
| Pulsed drain current2) , TC=25 °C | ID, pulse | 90 | A |
| Continuous diode forward current1) , TC=25 °C | IS | 30 | A |
| Diode pulsed current2) , TC=25 °C | IS, pulse | 90 | A |
| Power dissipation3) , TC=25 °C | PD | 71 | W |
| Single pulsed avalanche energy5) | EAS | 57 | mJ |
| Operation and storage temperature | Tstg ,Tj | -55 to 150 | °C |
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage | BVDSS | 100 | V | VGS=0 V, ID=250 μA | ||
| Gate threshold voltage | VGS(th) | 1.4 | 2.5 | V | VDS=VGS, ID=250 μA | |
| Drain-source on-state resistance | RDS(ON) | 13.8 | 20.0 | mΩ | VGS=10 V, ID=10 A | |
| Drain-source on-state resistance | RDS(ON) | 17.4 | 26.0 | mΩ | VGS=4.5 V, ID=7 A | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=20 V | ||
| -100 | VGS=-20 V | |||||
| Drain-source leakage current | IDSS | 1 | μA | VDS=100 V, VGS=0 V |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 16.2 | nC | VGS=10 V, VDS=50 V, ID=5 A | ||
| Gate-source charge | Qgs | 2.8 | nC | |||
| Gate-drain charge | Qgd | 4.1 | nC | |||
| Gate plateau voltage | Vplateau | 3 | V |
Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5) VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C.
Ordering Information
| Package Type | Units/ Reel | Reels / Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
| TO252-J | 2500 | 2 | 5000 | 5 | 25000 |
| TO252-P | 2500 | 2 | 5000 | 5 | 25000 |
Product Information
| Product | Package | Pb Free | RoHS | Halogen Free |
| SFG10S20DF | TO252 | yes | yes | yes |
Supply Chain
Green Product Declaration
We are supplier and manufacturer of original Power mosfet and IGBT semiconductor,We could supply competitive price and expected fast delivery and good quality with prompt service, We have our own R&D team , and Engineer to ensure to offer the best service to clients for sustainable support .
2. May I have some samples for testing?
We offer free samples for our customers and they only need to pay the freight for samples.
3. What about the delivery ?
Usually the lead time is about 1-4 weeks after receiving payment. For normal producing parts ,Please tell us three months in advance as global sourcing plan,we would have the quantity in stock all the year
4. What about the payment terms ?
This can be discussed based on the actual order situation.
5. What about the shipment terms ?
EXW SHANGHAI ; We also work with DHL, FEDEX, TNT and etc. For large quantity , it's up to clients to choose the freight forwarder, our we can offer the service to assist clients
6. Do you have any minimum order quantity requirement?
Based on the different products, for first trial order to test, we can offer the quantity based on clients request, for repeated order, MOQ is based on the minimum packaging quantity.
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