Menu
Suppliers Products
Global B2B sourcing platform
Verified suppliers and manufacturers
MadeInChina.com > Products > Electrical & Electronics > Electronic Tube & Transistor > Other Electronic Tubes & Transistors
Swipe or use the arrows to view product images.

To247 Ost30n65hmf Vces-650V Maximum Junction Temperature175, Pulse-120A Vce (sat) -1.5V N-Channel Power IGBT

Price $1.00
Min Order 600 Pieces
Availability In Stock
Shipping From Shanghai, China
Popularity 524 people viewed
Send Inquiry View Full Page
Model NO.:
TO247 OST30N65HMF
Certification:
RoHS, ISO
Shape:
Subminiature
Shielding Type:
Sharp Cutoff Shielding Tube
Cooling Method:
Air Cooled Tube
Function:
Switch Transistor
Working Frequency:
High Frequency
Structure:
Planar
Encapsulation Structure:
Chip Transistor
Power Level:
High Power
Material:
Silicon
Trademark:
Orientalsemi
Transport Package:
Carton
Specification:
35x30x37cm
Origin:
China
HS Code:
8541290000
Product Description

General Description
OST30N65HMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology  to   provide   extremely   low  VCE(sat), low   gate   charge,   and   excellent   switching performance. This device is suitable for mid to high range switching frequency converters.


Features
     Advanced TGBTTM technology
     Excellent conduction and switching loss
     Excellent stability and uniformity
     Fast and soft antiparallel diode



Applications
     PV inverters
     Induction converters
     Uninterruptible power supplies



Key Performance Parameters
ParameterValueUnit
VCES, min @ 25°C650V
Maximum junction temperature175°C
IC, pulse120A
VCE(sat), typ @ VGE=15V1.5V
Qg56nC



Absolute Maximum Ratings at Tvj=25°C unless otherwise noted
ParameterSymbolValueUnit
Collector emitter voltageVCES650V
Gate emitter voltage
VGES		±20V
Transient gate emitter voltage, TP≤10µs, D<0.01±30V
Continuous collector current1) , TC=25ºC
IC		42A
Continuous collector current1) , TC=100ºC30A
Pulsed collector current2) , TC=25ºCIC, pulse120A
Diode forward current1) , TC=25ºC
IF		42A
Diode forward current1) , TC=100ºC30A
Diode pulsed current2) , TC=25ºCIF, pulse120A
Power dissipation3) , TC=25ºC
PD		250W
Power dissipation3) , TC=100ºC125W
Operation and storage temperatureTstg, Tvj-55 to 175°C
Short circuit withstand time
VGE =15 V, VCC≤400 V
Allowed number of short circuits<1000
Time between short circuits:≥1.0 S
SC
5
μs




Thermal Characteristics
ParameterSymbolValueUnit
IGBT thermal resistance, junction-caseRθJC0.8°C/W
Diode thermal resistance, junction-caseRθJC1.65°C/W
Thermal resistance, junction-ambient4)RθJA40°C/W



Electrical Characteristics at Tvj =25°C unless otherwise specified
ParameterSymbolMin.Typ.Max.UnitTest condition
Collector-emitter   breakdown voltageV(BR)CES650  VVGE =0 V, IC =0.5 mA


Collector-emitter  saturation voltage

VCE(sat)		 1.51.63VVGE =15 V, IC=30 A
Tvj=25°C
 1.7 VVGE =15 V, IC=30 A,
Tvj  =125°C
 1.8  VGE =15 V, IC=30 A,
Tvj  =175°C
Gate-emitter       threshold voltageVGE(th)456VVCE =VGE , ID =0.5 mA


Diode forward
voltage

VF		 1.752.05VVGE =0 V, IF =30 A
Tvj  =25°C
 1.64  VGE =0 V, IF =30 A,
Tvj  =125°C
 1.57  VGE =0 V, IF =30 A,
Tvj  =175°C
Gate-emitter
leakage current		IGES  100nAVCE =0 V, VGE=20 V
Zero gate voltage collector currentICES  10μAVCE =650 V, VGE =0 V



Gate Charge Characteristics
 
ParameterSymbolMin.Typ.Max.UnitTest condition
Total gate chargeQg 56 nC
VGE =15 V,
VCC=520 V,
IC=30 A
Gate-emitter chargeQge 27 nC
Gate-collector chargeQgc 7 nC




Note
1)   Calculated continuous current based on maximum allowable junction temperature.
2)   Repetitive rating; pulse width limited by max. junction temperature.
3)   Pd is based on max. junction temperature, using junction-case thermal resistance.




Ordering Information
 
Package
Type		Units/
Tube		Tubes/  Inner BoxUnits/   Inner BoxInner Boxes/ Carton BoxUnits/     Carton Box
TO247-J302060042400




Product Information
ProductPackagePb FreeRoHSHalogen Free
OST30N65HMFTO247yesyesyes

 

Supply Chian




Green Product Declaration
  • Similar Products
Full Page Contact Supplier
↑