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To247 Ost50n65hf Vces-650V Maximum Junction Temperature175, Pulse-200A Vce (sat) -1.4V Qg-99nc N-Channel Power IGBT

Price $1.10
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Model NO.:
TO247 OST50N65HF
Certification:
RoHS, CE, ISO, CCC
Shape:
Metal Porcelain Tube
Shielding Type:
Sharp Cutoff Shielding Tube
Cooling Method:
Air Cooled Tube
Function:
Switch Transistor
Working Frequency:
High Frequency
Structure:
Planar
Encapsulation Structure:
Chip Transistor
Power Level:
High Power
Material:
Silicon
Trademark:
Orientalsemi
Transport Package:
Carton
Specification:
35x30x37cm
Origin:
China
HS Code:
8541290000
Product Description

General Description
OST50N65HF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM)
technology to provide extremely low VCE(sat), low gate charge, and excellent switching
performance. This device is suitable for mid to high range switching frequency converters.

 
Features
Advanced TGBTTM technology
Excellent conduction and switching loss
Excellent stability and uniformity


Applications
Induction converters
Uninterruptible power supplies 


Key Performance Parameters
ParameterValueUnit
VCES, min @ 25 °C650V
Maximum junction temperature175°C
IC, pulse150A
VCE(sat), typ @ VGE=15 V1.6V
Qg102nC



Absolute Maximum Ratings at Tvj=25 °C unless otherwise noted
ParameterSymbolValueUnit
Collector emitter voltageVCES650V
Gate emitter voltage
VGES		±20V
Transient gate emitter voltage, TP≤10 µs, D<0.01±30V
Continuous collector current1) , TC=25 °C
IC		80A
Continuous collector current1) , TC=100 °C50A
Pulsed collector current2) , TC=25 °CIC, pulse150A
Power dissipation3) , TC=25 °C
PD		270W
Power dissipation3) , TC=100 °C135W
Operation and storage temperatureTstg, Tvj-55 to 175°C
Short circuit withstand time
VGE =15 V, VCC≤400 V
Allowed number of short circuits<1000
Time between short circuits:≥1.0 S
Tvj =150 °C

SC
10
μs



Thermal Characteristics
ParameterSymbolValueUnit
IGBT thermal resistance, junction-caseRθJC0.55°C/W
Thermal resistance, junction-ambient4)RθJA40°C/W



Electrical Characteristics at Tvj=25°C unless otherwise specified
ParameterSymbolMin.Typ.Max.UnitTest condition
Collector-emitter   breakdown voltageV(BR)CES650  VVGE =0 V, IC =0.5 mA


Collector-emitter  saturation voltage

VCE(sat)		 1.62.0VVGE =15 V, IC=50 A
Tvj=25 °C
 1.8 VVGE =15 V, IC=50 A,
Tvj=125 °C
 1.9  VGE =15 V, IC=50 A,
Tvj=175 °C
Gate-emitter       threshold voltageVGE(th)3.04.25.5VVCE =VGE , ID =0.5 mA
Gate-emitter
leakage current		IGES  100nAVCE =0 V, VGE=20 V
Zero gate voltage collector currentICES  10μAVCE =650 V, VGE =0 V



Note
1)   Calculated continuous current based on maximum allowable junction temperature.
2)   Repetitive rating; pulse width limited by max. junction temperature.
3)   Pd is based on max. junction temperature, using junction-case thermal resistance.



Ordering Information
Package
Type		Units/
Tube		Tubes/  Inner BoxUnits/   Inner BoxInner Boxes/ Carton BoxUnits/     Carton Box
TO247-J302060053000



Product Information
ProductPackagePb FreeRoHSHalogen Free
OST50N65HFTO247yesyesyes


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