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Y42 D100*0.25 Litao3 Saw Filter Wafer

Price $35.00
Min Order 10 Pieces
Availability In Stock
Shipping From Shanghai, China
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Model NO.:
Y42 D100*0.25 LiTaO3 SAW filter wafer
Application:
Detector, Power Electronic Components, Television
Certification:
RoHS
Manufacturing Technology:
Optoelectronic Semiconductor
Material:
Compound Semiconductor
Model:
Single Side Polished and Blackended
Package:
100 Class Clean Bag
Signal Processing:
N/a
Trademark:
OPTICRYSTAL
Transport Package:
100 Classs Packaging
Specification:
Y42degree Diameter 100mm, 0.25mm thick
Origin:
Shanghai
HS Code:
9001909090
Product Description
Lithium tantalate LiTaO 3


LT lithium tantalate LiTaO 3 crystal is an important multifunctional crystal material. The crystal has excellent piezoelectric, ferroelectric, acousto-optic and electro-optic effects , so it has become an important choice in the fields of surface acoustic wave SAW devices, optical communications, lasers and optoelectronics. basic functional materials. Polished LT wafers are widely used in the manufacture of electronic communication devices such as resonators, filters, transducers, etc., especially for the manufacture of high-frequency surface acoustic wave devices due to their good electromechanical coupling, temperature coefficient and other comprehensive properties, and are used in Mobile phones, walkie-talkies, satellite communications, aerospace and many other high-end communication fields.
Main features:
Curie temperature point 603±2ºC; Electromechanical coupling coefficient R15≥0.3; Stable chemical and physical properties
Typical application:
Surface acoustic wave filter, resonator Q switch, optical modulator, acousto-optic switch, laser frequency doubling, optical parametric oscillator, optical memory, high temperature and high frequency ultrasonic detector, infrared detector, optical pickup device, etc.
Material properties:
Crystal structureTrigonal system
Lattice constanta=5.154Å,c=13.783Å
density7.45g/ cm3
melting point1650°C
Curie temperature603±2ºC
Moh's hardness5.5~6.0
Dielectric constantes11/eo:39~43, es33/eo:42~43; et11/eo:51~54, et33/eo:43~46
Resistivity1015wm
Thermal expansion coefficienta1=a2=1.61×10 -6 /ºC, a3=4.1×10 -6 /ºC
Refractive indexn0=2.176, ne=2.180 @633mn
Electro-optic coefficientR33=30.4
Pyroelectric coefficient2.3×10 -7 C/cm 2 /K
Through range400nm-5000nm
Product parameters:
size4"/6"/8" ingot, wafer, or custom size (SAW/Optical)
dopingUndoped or dopable Fe
Wafer Thickness0.25, 0.35, 0.50(mm)
TangentialY42°/Y36°/X/Y/Z can be customized according to customer needs
surface treatmentPolished on one side, Polished on both sides
TTV5µm
polished surfaceRoughness Ra≤1nm
Chamfer0.1mm@45° or round edge
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