Audited Supplier
4inch Dummy Grade
CCC, CE, RoHS
≤15μm
99.5~100mm
500±25μm
4 Inch D Grade
China
2804611900
Product Description
Product Description
Semi-insulating silicon carbide substrates are single crystal slices formed by cutting, grinding, polishing, cleaning and other processes of semi-insulating silicon carbide crystals. As an important raw material for the third-generation semiconductors, single crystal substrate slices can be made into silicon carbide-based radio frequency devices through heteroepitaxial growth and device manufacturing. They are important basic materials for the development of the third-generation semiconductor industry. In order to meet customer demand for 4,6-inch products, the company provides domestic and foreign customers with 4,6-inch semi-insulating substrate products with high cost performance in batches.
Downstream products and applications
High-purity semi-insulated silicon carbide single crystal substrate is mainly used in 5G communication, radar system, seeker, satellite communication, aircraft and other fields, with the advantages of improving the radio frequency range, ultra-long distance recognition, anti-interference, high-speed, large-capacity information transmission and other applications, and is regarded as the most ideal substrate for the production of microwave power devices.
Semi-insulating silicon carbide substrates are single crystal slices formed by cutting, grinding, polishing, cleaning and other processes of semi-insulating silicon carbide crystals. As an important raw material for the third-generation semiconductors, single crystal substrate slices can be made into silicon carbide-based radio frequency devices through heteroepitaxial growth and device manufacturing. They are important basic materials for the development of the third-generation semiconductor industry. In order to meet customer demand for 4,6-inch products, the company provides domestic and foreign customers with 4,6-inch semi-insulating substrate products with high cost performance in batches.
Downstream products and applications
High-purity semi-insulated silicon carbide single crystal substrate is mainly used in 5G communication, radar system, seeker, satellite communication, aircraft and other fields, with the advantages of improving the radio frequency range, ultra-long distance recognition, anti-interference, high-speed, large-capacity information transmission and other applications, and is regarded as the most ideal substrate for the production of microwave power devices.
We are constantly pursuing higher crystal quality and processing quality to better meet customer needs.
Currently, we can supply 4-inch and 6-inch products in batches.
8-inch products are under development.
Currently, we can supply 4-inch and 6-inch products in batches.
8-inch products are under development.
| 4 Inch High Purity Semi-insulating SiC Substrate | ||||
| Items | Unit | Production Grade | Dummy Grade | |
| 1.Crystal Parameters | ||||
| 1.1 | Polytype | -- | 4H | 4H |
| 1.2 | Surface orientation on-axis | -- | <0001> | <0001> |
| 1.3 | Surface orientation off-axis | ° | 0±0.2° | 0±0.2° |
| 1.4 | (0004)(FWHM) | arcsec | ≤45arcsec | ≤100arcsec |
| 2. Electrical Parameters | ||||
| 2.1 | Type | -- | HPSI | HPSI |
| 2.2 | Resistivity | ohm·cm | ≥1E10ohm·cm | 70% area>1E5ohm·cm |
| 3.Mechanical Parameters | ||||
| 3.1 | Diameter | mm | 99.5~100mm | 99.5~100mm |
| 3.2 | Thickness | μm | 500±25μm | 500±25μm |
| 3.3 | Primary flat orientation | ° | [1-100]±5° | [1-100]±5° |
| 3.4 | Primary flat length | mm | 32.5±1.5mm | 32.5±1.5mm |
| 3.5 | Secondary flat position | ° | ,90±5° 90°CW from primary flat ±5°, silicon face up | ,90±5° 90°CW from primary flat ±5°, silicon face up |
| 3.6 | Secondary flat length | mm | 18±1.5mm | 18±1.5mm |
| 3.7 | LTV | μm | ≤2μm(5mm*5mm) | NA |
| 3.8 | TTV | μm | ≤5μm | ≤15μm |
| 3.9 | Bow | μm | -15μm~15μm | -45μm~45μm |
| 3.10 | Warp | μm | ≤20μm | ≤50μm |
| 3.11 | (AFM) Front (Si-face) Roughness | nm | Ra≤0.2nm(5μm*5μm) | Ra≤0.2nm(5μm*5μm) |
| 4.Structure | ||||
| 4.1 | Micropipe Density | ea/cm2 | ≤1ea/cm2 | ≤10ea/cm2 |
| 4.2 | Carbon Density | ea/cm2 | ≤1ea/cm2 | NA |
| 4.3 | Hexagonal void | -- | None | NA |
| 4.4 | Metal impurities | atoms/cm2 | ≤5E12atoms/cm2 | NA |
| 5.Front Quality | ||||
| 5.1 | Front | -- | Si | Si |
| 5.2 | Surface Finish | -- | SiCMP Si-face CMP | SiCMP Si-face CMP |
| 5.3 | Particles | ea/wafer | ≤60(size≥0.3μm) | NA |
| 5.4 | Scratches | ea/mm | ≤2 ,Total Length≤Diameter | NA |
| 5.5 | Orange peel/pits/stains/striations/cracks/contamination | mm | None | NA |
| 5.6 | Edge chips/indents/fracture/hex plates | None | None | |
| 5.7 | Polytype areas | -- | None | ≤30% (Cumulative area) |
| 5.8 | Front laser marking | -- | None | None |
| 6.Back Quality | ||||
| 6.1 | Back Finish | -- | CCMP C-face CMP | CCMP C-face CMP |
| 6.2 | Scratches | ea/mm | ≤5 ,Total Length≤2*Diameter | NA |
| 6.3 | Back defects (edge chips/indents) | -- | None | None |
| 6.4 | Back roughness | nm | Ra≤0.2nm(5μm*5μm) | Ra≤0.2nm(5μm*5μm) |
| 6.5 | Back laser marking | -- | 1mm (from top edge) | 1mm (from top edge) |
| 7. Edge | ||||
| 7.1 | Edge | -- | Chamfer | Chamfer |
Q1: What's the way of shipping ?
A: We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A: T/T, PayPal and etc..
Q3: What's the deliver time?
A: For inventory: the delivery time is 10 workdays. For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
A: Yes, we can customize the specifications according to your needs.
Q5: How to guarantee the quality of your products?
A: Strict detection during production.Strict sampling inspection on products before shipment and intact product packaging ensured.
