6-Inch P-Grade Sic Wafer Sic Substrate MOS&Sbd

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Hangzhou HCJingRui Technology Co., Ltd.

VIP   Audited Supplier 2 years
Profile Certified by SGS/BV
Diode, Power Electronic Components
RoHS
Pvt
6n Sic Powder
4h
Epi-Ready with Vacuum Packaging
N-Type Semiconductor
6 Inch
350±25μm
4h
Ra≤0.2nm
0.016~0.025ohm ·cm
≤5μm(10mm*10mm)
≤35μm
HC
Multi-Waferorsingle Wafer Cassette Packaging
6Inch
China
2849200000
Product Description
Product Description

 The n-Type Substrates is an essential and important material to support the development of power electronics industry, which can be widely used in high-power high-frequency electronic devices, electric vehicle, photovoltaic inverter, rail transit power control system, etc.
     The company mainly supplies conductive silicon carbide substrates, which are suitable for the manufacture of power devices such as Schottky diodes, MOSFETs, and IGBTs. The sizes mainly include 2 inches, 4 inches, 6 inches,and 8 inches, and non-standard sizes can be customized. 


    Complete Growth-Process-Test
All aspects of inspection


   
                                                                             6 Inch N-type SiC substrate wafer
 
 
No.ItemsUnitUltra-P GradeProduction GradeResearch GradeDummy Grade
1.Boule Parameters
1.1Poly type--4H
1.2Surface orientation error°4° toward  <11-20>±0.15°4°  toward  <11-20>±0.5°4° toward  <11-20>±0.5°4°  toward  <11-20>±0.5°
2.Electrical Parameters
2.1dopantcm-³n-type Nitrogen
2.2resistivityohm ·cm0.016~0.024ohm ·cm0.015~0.025ohm ·cm0.015~0.025ohm ·cmNA
3.Mechanical Parameters
3.1diametermm150 ±0.25 mm
3.2hicknessμm350±25μm
3.3Primary flat orientation°[1-100]±5°
3.4Primary flat lengthmm47.5±1.5mm47.5±2.5mm47.5±2.5mm47.5±2.5mm
3.5LTVμm≤2μm(10mm*10mm)≤5μm(10mm*10mm)≤10μm(10mm*10mm)≤15μm(10mm*10mm)
3.6TTVμm≤5μm≤10 μm≤15 μm≤20 μm
3.7Bowμm-15 μm~15  μm-25 μm~25  μm-45 μm~45   μm-65  μm~65  μm
3.8Warpμm≤20μm≤35μm≤50μm≤70μm
3.9(AFM)Front(Si-face)RoughnessnmRa≤0.2nmRa≤0.2nmRa≤0.2nmRa≤0.2nm
4.Structure
4.1micropipe densityea/cm²≤0.15 ea/cm²≤0.5 ea/cm²≤1 ea/cm²≤2 ea/cm²
4.2metal contentatoms/cm²≤5E10 atoms/cm²≤1E11 atoms/cm²≤1E11 atoms/cm²NA
4.3TSDea/cm²≤100ea/cm²≤300ea/cm²≤500ea/cm²NA
4.4BPDea/cm²≤600ea/cm²≤1000ea/cm²≤1500ea/cm²NA
5.Front Quality
5.1front--SiSiSiSi
5.2surface finish--Si-face CMPSi-face CMPSi-face CMPSi-face CMP
5.3particleea/wafer≤60(size≥0.3 μm)≤100(size≥0.3 μm)NANA
5.4scratchesea/mm≤2,Total Length≤1/2*Diameter≤5,Total Length≤DiameterNANA
5.5chips/indents/cracks/stai--NoneNoneNoneNA
5.6Polytype areas--None≤0.5%Cumulative area)≤2%Cumulative area)≤5%Cumulative area)
5.7front marking--NoneNoneNoneNone
6.Back Quality
6.1back finish--C-face polished
6.2scratchesea/mm≤5,Total Length≤DiameterNANANA
6.3Back defects edge--NoneNoneNoneNA
6.4Back roughnessnmRa≤0.2nm(5μm*5μm)Ra ≤5nmRa ≤5nmRa ≤5nm
7.Edge
7.1Wafer Edge--ChamferChamferChamferChamfer
8.Packaging
8.1Packaging--Epi-ready with vacuum packaging
8.2Packaging--Multi-waferorSingle wafer cassette packaging
SEMI-STDNotes:"NA"means no request.Items not metioned may refer to SEMI-STD.
FAQ

 

Q1: What's the way of shipping ?
A:  We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A:  T/T, PayPal and etc..
Q3: What's the deliver time?
A:  For inventory: the delivery time is 10 workdays.   For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
 A: Yes, we can customize the specifications according to your needs.
Q5: How to guarantee the quality of your products?
 A: Strict detection during production.Strict sampling inspection on products before shipment and intact product packaging ensured.



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