60V 20A Nce60np2012K Nce N&P-Channel Complementary Power Mosfet with to-252-4L Used in H-Bridge

NCE provides N-channel SGT-I series power MOSFETs with breakdown voltage levels ranging from 30V to 250V. NCE's technology and excellent quality management ensure excellent product performance and reliability, and provide cost-effective solutions while reducing the difficulty of system design. They are widely used in synchronous rectification in switching mode power supplies (SMPS), DC motor control, solar micro inverters, telecom and server power supplies, and uninterruptible power supplies (UPS). For the power supply design field, designers are faced with the dual challenge of improving system efficiency and power density while reducing system cost, the new Clean Energy N-channel SGT-I series power MOSFET products can realize fast hard switching with their excellent on-resistance ( _RDS(on)) and quality factor (FOM, _{RDS(on) xQg} ), which greatly enhances the efficiency of the application, and becomes the perfect solution for this challenge.

The package range of N-channel SGT-I series power MOSFETs includes TO-220, TO-252, TO-247, TO-263, TO-251, TOLL, DFN5*6, DFN3*3, and SOP-8 packages, which provide designers with more abundant and flexible options for customization.

Note: SGT MOSFETs are also known as Super Trench MOSFETs.