8inch Ultra-P Grade 4h N Type Semiconductor Silicon Carbide Wafer Sic Substrate

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Hangzhou HCJingRui Technology Co., Ltd.

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4H N-type Ultra-P Grade
Diode, Power Electronic Components
RoHS
Pvt
6n Sic Powder
4h N-Type
Epi-Ready with Vacuum Packaging
N-Type Semiconductor
8 Inch
500±25μm
4h
0.015~0.025ohm·cm
≤7μm
≤30μm
Ra≤0.2nm
HC
Multi-Waferorsingle Wafer Cassette Packaging
8Inch 4H N-type
China
2804611900
Product Description
      The 8-inch N-type silicon carbide substrate is mainly used in new energy vehicles, high-voltage transmission and substations, white appliances, high-speed trains, motors, photovoltaic inverters, pulse power supplies and other fields. It has the advantages of reducing equipment energy loss, improving equipment reliability, reducing equipment size, and improving equipment performance. It has irreplaceable advantages in the manufacture of power electronic devices.
                                                                                               8 Inch N-type SiC substrate wafer
No.ItemsUnitUltra-P GradeProduction GradeDummy Grade
1.Boule Parameters
1.1  Polytype--4H4H4H
1.2 Surface orientation°4°toward<11-20>±0.5º4°toward<11-20>±0.5º4°toward<11-20>±0.5º
2. Electrical Parameters
2.1  Dopant--n-type Nitrogenn-type Nitrogenn-type Nitrogen
2.2 Resistivityohm·cm0.015~0.025ohm·cm0.015~0.025ohm·cmNA
3. Mechanical Parameters
3.1  Diametermm200.0±0.2mm200.0±0.2mm200.0±0.2mm
3.2  Thicknessμm500±25μm500±25μm500±25μm
3.3 Notch orientation°[1-100]±5°[1-100]±5°[1-100]±5°
3.4 Notch depthmm1~1.5mm1~1.5mm1~1.5mm
3.5  LTVμm3μm(10mm*10mm)5μm(10mm*10mm)15μm(10mm*10mm)
3.6  TTVμm7μm10μm20μm
3.7 Bowμm-20μm~20μm-25μm~25μm-65μm~65μm
3.8 Warpμm30μm35μm70μm
3.9 (AFM) Front (Si-face)
Roughness
nmRa0.2nmRa0.2nmRa0.2nm
4. Structure
4.1  Micropipe densityea/cm2<0.2ea/cm2<2ea/cm2<50ea/cm2
4.2  Metal impuritiesatoms/cm21E11atoms/cm2(Al, Cr, Fe,
Ni, Cu, Zn, Pb, Na, K, Ti, Ca,
V, Mn)
1E11atoms/cm2(Al, Cr, Fe, Ni,
Cu, Zn, Pb, Na, K, Ti, Ca, V,Mn)
1E11atoms/cm2(Al, Cr, Fe, Ni,
Cu, Zn, Pb, Na, K, Ti, Ca, V,
Mn)
4.3  TSDea/cm2200ea/cm2500ea/cm2NA
4.4  BPDea/cm21000ea/cm22000ea/cm2NA
4.5 TEDea/cm23000ea/cm27000ea/cm2NA
5.Front Quality
5.1 Front--SiSiSi
5.2  Surface Finish--CMP Si-face CMPCMP Si-face CMPCMP Si-face CMP
5.3 Particlesea/wafer60(size0.3μm)100(size0.3μm)NA
5.4 Scratchesea/mm5,Total Length
1/2*Diameter
5,Total LengthDiameterNA
5.5 Edge
chips/indents/cracks/contamination/stains
--NoneNoneNA
5.6 Polytype areas--NoneNone30%Cumulative
area)
5.7  Front laser marking--NoneNoneNone
6. Back Quality
6.1  Back finish-- C-face polishedC-face polished C-face polished
6.2 Scratchesea/mm5,Total LengthDiameterNANA
6.3  Back defects (edge chips/indents)--NoneNoneNA
6.4  Back roughnessnmRa5nmRa5nmRa5nm
6.5  Back laser marking--NotchSEMINotchSEMINotchSEMI
7.Edge
7.1  Edge-- Chamfer Chamfer Chamfer
8. Packaging
8.1 Packaging--Epi-ready
with vacuum packaging
Epi-ready
with vacuum packaging
Epi-ready
with vacuum packaging
8.2 Packaging-- Multi-wafer or
single wafer cassette packaging
 Multi-wafer or
single wafer cassette packaging
 Multi-wafer or
single wafer cassette packaging
Notes: "NA"means no request. Items not metioned may refer to SEMI-STD.
FAQ

Q1: What's the way of shipping ?
A:  We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A:  T/T, PayPal and etc..
Q3: What's the deliver time?
A:  For inventory: the delivery time is 10 workdays.   For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
 A: Yes, we can customize the specifications according to your needs.
Q5: How to guarantee the quality of your products?
 A: Strict detection during production.Strict sampling inspection on products before shipment and intact product packaging ensured.
 

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