Audited Supplier
INC-DBC20310
Aerospace, Electronics, Medical, Vacuum Brazing
2300MPa
8-30μm
Mo/Mn
Nickel/Copper/Gold
25W/(M.K)
2-9μm
1600ºC
3.7g/cm3
Insulating Ceramics
INNOVACERA
Carton Packing
Customized
Fujian, China
Product Description
DBC (Direct Bonded Copper) substrates are composed of a ceramic insulator, Al2O3 or AlN onto which pure copper metal is attached by a high-temperature eutectic melting process and thus tightly and firmly joined to the ceramic. DBC Ceramic Substrate Key Features: Ceramic metallized: Ti/W, gold(Au), silver(Ag),Copper(Cu),nickel(Ni)¡Kothers & produce final circuit Coating: 0.075um to 5mil Ceramic Metallized substrate: Al2O3 substrate metallized AlN substrate metallized Silicon wafer metallized Directed Plated Copper Substrate Application: 1. High Power LED ceramic substrate 2. Microwave (Wireless Communication & Radar) 3. Semiconductor Process Equipment 4. Solar Cell 5. Hybrid Electric Vehicles 6. Flip-chip/eutectic substrate 7. Sensor ceramic substrate In future, the DBC ceramic substrates market will develop rapidly, driven by the demand from IGBT, automobile, CPV, aerospace and communication. The electric vehicles market will drive the DBC ceramic substrates to increase in the next ten years. | ||||||||
Aluminium Nitride Material Properties | ||||||||
Properties | INC-AN180 | INC-AN200 | INC-AN220 | |||||
Color | Gray | Gray | Beige | |||||
Main Content | 96%ALN | 96%ALN | 97%ALN | |||||
Main Characteristics | High Thermal Conductivity,Excellent Plasma Resistance | |||||||
Main Applications | Heat Dissipating Parts,Plasma Resistance Parts | |||||||
Bulk Density | 3.30 | 3.30 | 3.28 | |||||
Water Absorption | 0.00 | 0.00 | 0.00 | |||||
Vickers Hardness(Load 500g) | 10.00 | 9.50 | 9.00 | |||||
Flexural Strength | >=350 | >=325 | >=280 | |||||
Compressive Strength | 2,500.00 | 2,500.00 | - | |||||
Young' Modulus of Elasticity | 320.00 | 320.00 | 320.00 | |||||
Poisson's Ratio | 0.24 | 0.24 | 0.24 | |||||
Fracture Toughness | - | - | - | |||||
Coefficient Linear Thermal Expansion | 40-400 degree Celsius | 4.80 | 4.60 | 4.50 | ||||
Thermal Conductivity | 20 degree Celsius | 180.00 | 200.00 | 220.00 | ||||
Specific Heat | 0.74 | 0.74 | 0.76 | |||||
Thermal Shocking Resistance | - | - | - | |||||
Volume Resistivity | 20 degree Celsius | >=10-14 | >=10-14 | >=10-13 | ||||
Dielectric Strength | >=15 | >=15 | >=15 | |||||
Dielectric Constant | 1MHz | 9.00 | 8.80 | 8.60 | ||||
Loss Tangent | *10-4 | 5.00 | 5.00 | 6.00 | ||||
Remark: The value is just for review, different using conditions will have a little difference. | ||||||||
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