Alumina / Aluminum Nitride / Silicon Nitride Directed Plated Copper Dpc Substrate

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Xiamen Innovacera Advanced Materials Co., Ltd.

VIP   Audited Supplier 2 years
Profile Certified by SGS/BV
INC-DBC20310
Aerospace, Electronics, Medical, Vacuum Brazing
2300MPa
8-30μm
Mo/Mn
Nickel/Copper/Gold
25W/(M.K)
2-9μm
1600ºC
3.7g/cm3
Insulating Ceramics
INNOVACERA
Carton Packing
Customized
Fujian, China
Product Description
 
DBC (Direct Bonded Copper) substrates are composed of a ceramic insulator, Al2O3 or AlN onto which pure copper metal is attached by a high-temperature eutectic melting process and thus tightly and firmly joined to the ceramic.
 
DBC Ceramic Substrate Key Features:
Ceramic metallized: Ti/W, gold(Au), silver(Ag),Copper(Cu),nickel(Ni)¡Kothers & produce final circuit
Coating: 0.075um to 5mil
 
Ceramic Metallized substrate:
Al2O3 substrate metallized
AlN substrate metallized
Silicon wafer metallized
 
Directed Plated Copper Substrate Application:
1. High Power LED ceramic substrate
2. Microwave (Wireless Communication & Radar)
3. Semiconductor Process Equipment
4. Solar Cell
5. Hybrid Electric Vehicles
6. Flip-chip/eutectic substrate
7. Sensor ceramic substrate
 
In future, the DBC ceramic substrates market will develop rapidly, driven by the demand from IGBT, automobile, CPV, aerospace and communication. The electric vehicles market will drive the DBC ceramic substrates to increase in the next ten years.
 
 
 
 
 
Aluminium Nitride Material Properties
 
 
 
 
Properties
 
INC-AN180
INC-AN200
INC-AN220
Color
 
Gray
Gray
Beige
Main Content
 
96%ALN
96%ALN
97%ALN
Main Characteristics
 
High Thermal Conductivity,Excellent Plasma Resistance
 
 
Main Applications
 
Heat Dissipating Parts,Plasma Resistance Parts
 
 
Bulk Density
 
3.30
3.30
3.28
Water Absorption
 
0.00
0.00
0.00
Vickers Hardness(Load 500g)
 
10.00
9.50
9.00
Flexural Strength
 
>=350
>=325
>=280
Compressive Strength
 
2,500.00
2,500.00
-
Young' Modulus of Elasticity
 
320.00
320.00
320.00
Poisson's Ratio
 
0.24
0.24
0.24
Fracture Toughness
 
-
-
-
Coefficient Linear Thermal Expansion
40-400 degree Celsius
4.80
4.60
4.50
Thermal Conductivity
20 degree Celsius
180.00
200.00
220.00
Specific Heat
 
0.74
0.74
0.76
Thermal Shocking Resistance
 
-
-
-
Volume Resistivity
20 degree Celsius
>=10-14
>=10-14
>=10-13
Dielectric Strength
 
>=15
>=15
>=15
Dielectric Constant
1MHz
9.00
8.80
8.60
Loss Tangent
*10-4
5.00
5.00
6.00
Remark: The value is just for review, different using conditions will have a little difference.
 
 
 
 
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