Gallium Nitride (GaN) Templates on Sapphire Substrates/Silicon Wafers

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Jiaozuo Commercial Finewin Co., Ltd.

VIP   Audited Supplier 9 years
Profile Certified by SGS/BV
  • Henan, China
  • Doris (Ms.)  
    Sales Executive
Gallium Nitride
3-4um or 20um
2inch or 4inch
Optoelectronic Semiconductor
Compound Semiconductor
N-type Semiconductor
SMD
Television
Finewin
FineWin
Box
2INCH
Jiaozuo City Henan Province
Product Description

Gallium Nitride (GaN) Templates on Sapphire Substrates/silicon wafers


1. What is templates
We use the term "template" to describe our products as they are different to substrates. Specifically, a template is a composite or engineered substrate, where one or more layers are added to the original susbstrate.

2.Application
 
Blue and white LED for room lightings, displays and general use

GaN power switching devices

3.Product available

2" to 4" GaN-templates on FSS and PSS
Thick GaN-templates (t=3~20μm)
GaN-template with highly doped n-type layer (n=<1e19/cm3)
Ntype (undoped), Ntype (Si doped), and Ptype(Mg doped) templates are available
GaN Templates on both sapphire substres and Silicon substrates

4. Features
XRD-FWHM002102
3-4μGaN/Sapphire200-300250-450


 Dislocation density:3.5E+08 cm-2



5. Specification
2inch specification
ItemGaN-FS-C-U-C50GaN-FS-C-N-C50GaN-FS-C-SI-C50
DimensionsФ 50.8 mm ± 1 mm
Thickness350 ± 25 µm
Useable Surface Area> 90%
OrientationC-plane (0001) off angle toward M-Axis 0.35°± 0.15°
Orientation Flat(1-100) ± 0.5°, 16.0 ± 1.0 mm
Secondary Orientation Flat(11-20) ± 3°, 8.0 ± 1.0 mm
Total Thickness Variation≤ 15 µm
BOW≤ 20 µm
Conduction TypeN-type
(Undoped)
N-type
(Ge-doped)
Semi-Insulating
(Fe-doped)
Resistivity(300K)< 0.5 Ω·cm< 0.05 Ω·cm>106 Ω·cm
Dislocation Density1~9x105 cm-25x105 cm-2
~3x106 cm-2
1~9x105 cm-2
1~3x106 cm-21~3x106 cm-2
PolishingFront Surface: Ra < 0.2 nm. Epi-ready polished
Back Surface: Fine ground
PackagePackaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

4inch specification
ItemGaN-T-C-U-C100GaN-T-C-N-C100
DimensionsФ 100 mm ± 0.1 mm
Thickness4 µm, 20 µm
OrientationC-plane(0001) ± 0.5°
Conduction TypeN-type
(Undoped)
N-type
(Si-doped)
Resistivity 300K< 0.5 Ω·cm< 0.05 Ω·cm
Carrier Concentration< 5x1017 cm-3> 1x1018 cm-3
Mobility~ 300cm2/V·s~ 200 cm2/V·s
Dislocation DensityLess than 5x108 cm-2
Substrate structureGaN on Sapphire(Standard: SSP Option: DSP)
Useable Surface Area> 90%
PackagePackaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.

6. Product pictures


Overseas exhibition



FAQ:
Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, TNT, UPS, EMS etc.
   (2) If you have your own express account, it's great.If not,we could help you ship them. 
 Q: How to pay?
A: T/T, Paypal, etc
Q: What's your MOQ?
A:  (1) For inventory, the MOQ is 5pcs.
  (2) For customized products, the MOQ is 10pcs-25pcs.
Q: What's the delivery time?
A:  (1) For the standard products
          For inventory: the delivery is 5 workdays after you place the order.
          For customized products: the delivery is 2 or 3 weeks after you place the order.
     (2) For the special-shaped products, the delivery is 4 or 6 workweeks after you place the order.
Q: Do you have standard products?
A: Our standard products in stock.
Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.



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