Zg Brand Bridge Rectifier Diode MB10f MB10m MB10s

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Jiangsu Zhongxin Semiconductor Co., Ltd.

VIP   Audited Supplier 8 years
Profile Certified by SGS/BV
Plastic Sealed Transistor
Electronic Products
RoHS, CE, ISO
Standard
Grey,Black
Mbs,Mbm,DBS,dB,Wob,RS-2,Gbj2,Kbpc1,Kbp,Kbl,Gbj4
Silicon
ZG Brand
by Sea, Packaging in Cartons
MBS,MBM,DBS,DB,WOB,RS-2,GBJ2,KBPC1,KBP,KBL,GBJ4
Anhui Province, China
8541100000
Product Description
Product Description

 

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Company Profile

 

Anhui Zhongxin Semiconductor Co., Ltd. was established in 2010 and covers an area of 20000 square meters, which is located in Anhui Province, near Shanghai. Our company is focus on the development and production of diode, rectifier diode, mosfet, schottky diode, fast recovery diode, bridge rectifier, silicon wafer, etc. Our mission is to be the most valuable semiconductor supplier beside you. Welcome to contact us for future business relationships and mutual success.
 SymbolsMB2MMB4MMB6MMB8MMB10MUnits
Maximum repetitive peak reverse
voltage
VRMM2004006008001000Volts
Maximum RMS voltageVRMS140280420560700Volts
Maximum DC blocking voltageVDC2004006008001000Volts
Maximum average forward rectified current at TA=30ºC On glass-epoxy
P.C.B. On aluminum substrate(Note 1,2)

IF(AV)

0.8

Amps
Peak Forward Surge Current 8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)

IFSM

30.0

Amps
Maximum forward voltage at 0.4AVF1.1Volts
Maximum DC reverse current TA=25ºC
at rated DC blocking voltage TA=100ºC
IR5.0
100
μA
Typical junction capacitance per leg
(Note 3)
CJ15.0pF
Typical thermal resistance per legRθJA75.0ºC/W
Operating Temperature RangeTJ-55 to +150ºC
Storage Temperature RangeTSTG-55 to +150ºC
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