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China
Product Description
1 . High strength: T-ZnOw is of single wurtzite crystal with almost no structure
defects. It is nearly a kind of ideal crystal with high mechanical strength and modulus
of elasticity. Its tensile strength and modulus of elasticly reached 1.0×104 Mpa and
3.5×105 Mpa respectively, close to the theoretical values.
2. Isotropic behaviour: the unique three-dimensional tetra-needle like structure
give it isotropic reinforcing and modification effect, guaranteeing products with
isotropic mechanical properties, dimension homogeneity, thermal contraction and
other characteristics.
3. Excellent heat resistance: Melting point of ZnO is higher than 1800 ºC, and
T-ZnOw can resist 1750 ºC. Higher than 1000ºC under atmospheric pressure may
result in structure damage at the needle tip.
4. Adjustable electric properties: ZnO is a n-type of semiconductor that can be
doped to control its conductivity, piezoelectricity, piezosensitivity and other electric
and electronic properties.
5. Activity of nanosemiconductor: T-ZnOw has special nanoactivity due to its
unique structure. With the nonstoichiometric characteristic, T-ZnOw can release
reactive oxygen species, giving it high efficient, broad spectrum and long-term
antibacterial and environmental cleaning property
defects. It is nearly a kind of ideal crystal with high mechanical strength and modulus
of elasticity. Its tensile strength and modulus of elasticly reached 1.0×104 Mpa and
3.5×105 Mpa respectively, close to the theoretical values.
2. Isotropic behaviour: the unique three-dimensional tetra-needle like structure
give it isotropic reinforcing and modification effect, guaranteeing products with
isotropic mechanical properties, dimension homogeneity, thermal contraction and
other characteristics.
3. Excellent heat resistance: Melting point of ZnO is higher than 1800 ºC, and
T-ZnOw can resist 1750 ºC. Higher than 1000ºC under atmospheric pressure may
result in structure damage at the needle tip.
4. Adjustable electric properties: ZnO is a n-type of semiconductor that can be
doped to control its conductivity, piezoelectricity, piezosensitivity and other electric
and electronic properties.
5. Activity of nanosemiconductor: T-ZnOw has special nanoactivity due to its
unique structure. With the nonstoichiometric characteristic, T-ZnOw can release
reactive oxygen species, giving it high efficient, broad spectrum and long-term
antibacterial and environmental cleaning property
