Swipe or use the arrows to view product images.
10A 650V N-Channel Enhancement Mode Power Mosfet DHD10n65 to-252
| Price | $1.50 |
|---|---|
| Min Order | 5000 Pieces |
| Availability | In Stock |
| Shipping From | Jiangsu, China |
| Popularity | 239 people viewed |
Model NO.:
DHD10N65
Voltage:
650V
Current:
10A
Manufacturing Technology:
Discrete Device
Type:
N-type Semiconductor
Material:
Metal-Oxide Semiconductor
Package:
to-252
Application:
Power Switching Applications
Model:
DHD10n65
Batch Number:
2021
Brand:
Wxdh
Trademark:
WXDH
Transport Package:
Tape & Reel
Origin:
Wuxi, China
HS Code:
8541290000
Product Description
| PARAMETER | SYMBOL | VALUE | UNIT | ||
| DHB10N65/DHD10N65 | |||||
| Drian-to-Source Voltage | VDSS | 650 | V | ||
| Gate-to-Drian Voltage | VGSS | ±30 | V | ||
| Drain Current(continuous) | ID(T=25ºC) | 10 | A | ||
| (T=100ºC) | 6.3 | A | |||
| Drain Current(Pulsed) | IDM | 40 | A | ||
| Single Pulse Avalanche Energy | EAS | 500 | mJ | ||
| Total Dissipation | Ta=25ºC | Ptot | 1.15 | W | |
| TC=25ºC | Ptot | 120 | W | ||
| Junction Temperature | Tj | -55~150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Features |
| Fast Switching |
| Low ON Resistance |
| Low Gate Charge |
| Low Reverse Transfer Capacitances |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| used in various power switching circuit for system miniaturization and higher efficiency. |
| Power switch circuit of electron ballast and adaptor. |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| DHB10N65 | TO-251 | DHB10N65 | Pb-free | Tube | 3000/box |
| DHD10N65 | TO-252 | DHD10N65 | Pb-free | Tape & Reel | 2500/box |
- Similar Products
$1.50
5000 Pieces (MOQ)
Insulated Gate Bipolar Transistor IGBT G30n60d to-247
Jiangsu Donghai Semiconductor Co.,Ltd
$100.00
10 Pieces (MOQ)
Kp Zp Kk SCR / Thyristor 200A 300A 400A 500A 600A 800A
Sailing Commercial (Tianjin) Co., Ltd.