Audited Supplier
DHD10N65
650V
10A
Discrete Device
N-type Semiconductor
Metal-Oxide Semiconductor
to-252
Power Switching Applications
DHD10n65
2021
Wxdh
WXDH
Tape & Reel
Wuxi, China
8541290000
Product Description
| PARAMETER | SYMBOL | VALUE | UNIT | ||
| DHB10N65/DHD10N65 | |||||
| Drian-to-Source Voltage | VDSS | 650 | V | ||
| Gate-to-Drian Voltage | VGSS | ±30 | V | ||
| Drain Current(continuous) | ID(T=25ºC) | 10 | A | ||
| (T=100ºC) | 6.3 | A | |||
| Drain Current(Pulsed) | IDM | 40 | A | ||
| Single Pulse Avalanche Energy | EAS | 500 | mJ | ||
| Total Dissipation | Ta=25ºC | Ptot | 1.15 | W | |
| TC=25ºC | Ptot | 120 | W | ||
| Junction Temperature | Tj | -55~150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Features |
| Fast Switching |
| Low ON Resistance |
| Low Gate Charge |
| Low Reverse Transfer Capacitances |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| used in various power switching circuit for system miniaturization and higher efficiency. |
| Power switch circuit of electron ballast and adaptor. |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| DHB10N65 | TO-251 | DHB10N65 | Pb-free | Tube | 3000/box |
| DHD10N65 | TO-252 | DHD10N65 | Pb-free | Tape & Reel | 2500/box |
