30A 200V Schottky Barrier Diode Mbr30100CT to-220 & Mbr30100nct to-3pn

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Jiangsu Donghai Semiconductor Co.,Ltd

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MBR30100CT/MBR30100NCT
Discrete Device
N-type Semiconductor
Silicon
to-220/3pn
Switching Power Supply
Mbr30100CT/Mbr30100nct
2023
Wxdh
WXDH
Tube
Wuxi, China
8541100000
Product Description

 
Features
High junction temperature capabiliy
Low leakage current
Low thermal resistance
High frequency operation
Avalanche specification
Applications
Switching Power Supply
Power Switching Circuits
General Purpose
 
PARAMETERSYMBOLVALUEUNIT
 
Peak Repetitive Reverse VoltageVRRM100V
RMS Reverse VoltageVR(RMS)80V
DC Blocking VoltageVR100V
Average Rectified Forward Current(single)TC=120ºC
 
IF(AV)15A
Average Rectified Forward Current(double)30A
Repetitive Peak Surge Current(single)IFRM20A
Nonrepetitive Peak Surge Current(single)t=8.3msIFSM200A
Avalanche Energy(single)L=1mHEAS32mJ
Junction TemperatureTj-55~150ºC
storage TemperatureTstg-55~150ºC
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
MBR30100NCTTO-3PNMBR30100NCTPb-freeTube300/box
MBR30100BCTTO-247MBR30100BCTPb-freeTube300/box
MBR30100CTTO-220MBR30100CTPb-freeTube1000/box
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