Audited Supplier
DHD7N65
Power Switching Circuit
2022
RoHS
Discrete Device
Metal-Oxide Semiconductor
DHD7n65
to-252b
N-Type Semiconductor
650V
7A
Wxdh
WXDH
Tube
Wuxi, China
8541290000
Product Description
| PARAMETER | SYMBOL | VALUE | UNIT | |
| Maximum Drian-Source DC Voltage | VDS | 650 | V | |
| Maximum Gate-Drain Voltage | VGS | ±30 | V | |
| Drain Current(continuous) | ID(T=25ºC) | 7 | A | |
| (T=100ºC) | 4.4 | A | ||
| Drain Current(Pulsed) | IDM | 28 | A | |
| Single Pulse Avalanche Energy | EAS | 350 | mJ | |
| Total Dissipation | Ta=25ºC | Ptot | 0.8 | W |
| TC=25ºC | Ptot | 100 | W | |
| Junction Temperature | Tj | -55~150 | ºC | |
| storage Temperature | Tstg | -55~150 | ºC | |
| Features |
| Fast Switching |
ESD improved capability |
Low on resistance(Rdson≤2.3Ω) |
Low gate charge(Typ: 24nC) |
Low reverse transfer capacitances(Typ: 5.5pF) |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| Used in various power switching circuit for system miniaturization and higher efficiency. |
| Power switch circuit of adaptor and charger. |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| DHD7N65 | TO-252B | DHD7N65 | Pb-free | REEL | 5000/box |
