60A 600V Fast Recovery Diode Mur6060DCT to-3p & Mur6060bct to-247

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Jiangsu Donghai Semiconductor Co.,Ltd

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  • Jiangsu, China
  • Winnie Gao (Ms.)  
    Saleman
MUR6060DCT / MUR6060BCT
Discrete Device
N-type Semiconductor
Silicon
to-3pn/247
Switching Power Supply, General Purpose
Mur6060DCT/Bct
2023
Wxdh
WXDH
Tube
Wuxi, China
8541100000
Product Description
 
PARAMETERSYMBOLVALUEUNIT
Peak Repetitive Reverse VoltageVRRM600V
Working Peak Reverse VoltageVRWM600V
DC Blocking VoltageVR600V
Average Rectified Forward Current(single)Tc=135ºCIF(AV)30A
Average Rectified Forward Current(double)Tc=135ºC60A
Repetitive Peak Surge Current(single)IFRM45A
Nonrepetitive Peak Surge Current(single)t=8.3msIFSM300A
Avalanche Energy(single)L=1mHEAS30mJ
Operating Junction Temperature RangeTj-55~150ºC
Storage Temperature RangeTstg-55~150ºC
 
Features
Low power loss
high efficiency Low forward voltage
high current capability High surge capacity
Super fast recovery times
high voltage
 
Applications
Switching Power Supply
Power Switching Circuits
General Purpose
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
MUR6060NCTTO-3PNMUR6060NCTPb-freeTube300/box
MUR6060DCTTO-3PMUR6060DCTPb-freeTube300/box
MUR6060BCTTO-247MUR6060BCTPb-freeTube300/box
 
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