Audited Supplier
F7N80
800V
7A
Discrete Device
N-type Semiconductor
Metal-Oxide Semiconductor
to-220f
LED Power Switch Circuit, Electronic Ballast
F7n80
2022
Wxdh
WXDH
Tube
Wuxi, China
8541290000
Product Description
| PARAMETER | SYMBOL | VALUE | UNIT | ||
| 7N80/I7N80/E7N80 | F7N80 | ||||
| Maximum Drian-Source DC Voltage | VDS | 800 | V | ||
| Maximum Gate-Drain Voltage | VGS | ±30 | V | ||
| Drain Current(continuous) | ID(T=25ºC) | 7 | A | ||
| (T=100ºC) | 4 | A | |||
| Drain Current(Pulsed) | IDM | 28 | A | ||
| Single Pulse Avalanche Energy | EAS | 150 | mJ | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | ||
| Total Dissipation | Ta=25ºC | Ptot | 2 | 2 | W |
| TC=25ºC | Ptot | 120 | 48 | W | |
| Junction Temperature | Tj | -55~150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Features |
| Fast Switching |
| Low ON Resistance |
| Low Gate Charge |
| Low Reverse Transfer Capacitances |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| LED power switch circuit |
| Electronic ballast |
| ATX power |
| High voltage H bridge PWM motor drive |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| 7N80 | TO-220C | 7N80 | Pb-free | Tube | 1000/box |
| F7N80 | TO-220F | F7N80 | Pb-free | Tube | 1000/box |
| I7N80 | TO-262 | I7N80 | Pb-free | Tube | 1000/box |
| E7N80 | TO-263 | E7N80 | Pb-free | Tape & Reel | 800/box |
