33A 60V N-Channel Enhancement Mode Power Mosfet Dh240n06lb to-251b

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Jiangsu Donghai Semiconductor Co.,Ltd

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DH240N06LB
Power Switching Applications
2021
Discrete Device
Metal-Oxide Semiconductor
Dh240n06lb
to-251b
P-Type Semiconductor
60V
33A
Wxdh
WXDH
Tape & Reel
Wuxi, China
8541290000
Product Description
PARAMETERSYMBOL
 
VALUE
 
UNIT
 
DH240N06L
DH240N06LI/DH240N06LE
DH240N06LB/DH240N06LD
DH240N06LF
Drian-to-Source VoltageVDSS60V
Gate-to-Source VoltageVGSS±20V
Drain Current(continuous)ID(T=25ºC)33A
(T=100ºC)23A
Drain Current(Pulsed)IDM132A
Single Pulse Avalanche EnergyEAS100mJ
Total DissipationTa=25ºCPtot22W
TC=25ºCPtot6020W
Junction TemperatureTj-55~175ºC
storage TemperatureTstg-55~175ºC
 
Features
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Power switching applications
DC-DC converters
Full bridge control
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
DH240N06LTO-220CDH240N06LPb-freePIPE1000/box
DH240N06LFTO-220FDH240N06LFPb-freePIPE1000/box
DH240N06LETO-263DH240N06LEPb-freeREEL800/box
DH240N06LBTO-251BDH240N06LBPb-freePIPE3000/box
DH240N06LD
TO-252B
DH240N06LD
Pb-freeREEL5000/box
 
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