80A 80V N-Channel Enhancement Mode Power Mosfet Dh80n08 to-220

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Jiangsu Donghai Semiconductor Co.,Ltd

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  • Jiangsu, China
  • Winnie Gao (Ms.)  
    Saleman
DH80N08
Discrete Device
N-type Semiconductor
Metal-Oxide Semiconductor
to-220
Power Switching, Converters, Full Bridge Control
Dh80n08
2022
Wxdh
WXDH
Tube
Wuxi, China
8541290000
Product Description

 
PARAMETERSYMBOLVALUEUNIT
DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08DHF80N08
Drian-to-Source VoltageVDSS80V
Gate-to-Source VoltageVGSS±25V
Drain Current(continuous)ID(T=25ºC)80A
(T=100ºC)65A
Drain Current(Pulsed)IDM320A
Single Pulse Avalanche EnergyEAS400mJ
Total DissipationTa=25ºCPtot22W
TC=25ºCPtot21084W
Junction TemperatureTj-55~175ºC
storage TemperatureTstg-55~175ºC
 
Features
Fast Switching
High avalanche Current
Low ON Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Power switching applications
DC-DC Convertors
UPS power supply
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
DH80N08TO-220CDH80N08Pb-freeTube1000/box
DHF80N08TO-220FDHF80N08Pb-feeTube1000/box
DHB80N08TO-251DHB80N08Pb-freeTube3000/box
DHD80N08TO-252DHD80N08Pb-freeTape & Reel2500/box
DHI80N08TO-262DHI80N08Pb-freeTube1000/box
DHE80N08TO-263DHE80N08Pb-freeTape & Reel800/box
 
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