110A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06e

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Jiangsu Donghai Semiconductor Co.,Ltd

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DH066N06E
Power Switching Applications, Electric Tools
2023
Discrete Device
Metal-Oxide Semiconductor
Dh066n06e
to-220
N-Type Semiconductor
60V
110A
Wxdh
WXDH
Tube
Wuxi, China
8541290000
Product Description
PARAMETERSYMBOLVALUEUNIT
DH066N06/DH066N06D 
Drian-to-Source VoltageVDSS60V
Gate-to-Source VoltageVGSS±20V
Drain Current(continuous)ID(T=25ºC)110A
(T=100ºC)78A
Drain Current(Pulsed)IDM440A
Single Pulse Avalanche EnergyEAS484mJ
Total DissipationTa=25ºCPtot2 W
TC=25ºCPtot150 W
Junction TemperatureTj-55~175ºC
storage TemperatureTstg-55~175ºC
 
Features
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Power switching applications
Inverter management system
Electric tools
Automotive electronics
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
DH066N06TO-220CDH066N06Pb-freeTube1000/box
DH066N06FTO-220FDH066N06FPb-freeTube1000/box
DH066N06BTO-251DH066N06BPb-freeTube3000/box
DH066N06DTO-252DH066N06DPb-freeTape & Reel2500/box
DH066N06ITO-262DH066N06IPb-freeTube1000/box
DH066N06ETO-263DH066N06EPb-freeTape & Reel800/box
 
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