70A 100V N-Channel Enhancement Mode Power Mosfet D70n10 to-220

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Jiangsu Donghai Semiconductor Co.,Ltd

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D70N10
Power Switching
2021
Discrete Device
Metal-Oxide Semiconductor
D70n10
to-220
N-Type Semiconductor
100V
70A
Wxdh
WXDH
Tube
Wuxi, China
8541290000
Product Description

 
PARAMETERSYMBOLVALUEUNIT
D70N10/ID70N10/ED70N10/BD70N10/DD70N10FD70N10
Maximum Drian-Source DC VoltageVDS100V
Maximum Gate-Drain VoltageVGS±25V
Drain Current(continuous)ID(T=25ºC)73A
(T=100ºC)51A
Drain Current(Pulsed)IDM219A
Single Pulse Avalanche EnergyEAS650mJ
Total DissipationTa=25ºCPtot22W
TC=25ºCPtot16680W
Junction TemperatureTj-55~175ºC
storage TemperatureTstg-55~175ºC
 
Features
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Power switching applications
DC-DC converters
UPS power supply
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
D70N10TO-220CD70N10Pb-freeTube1000/box
FD70N10TO-220FFD70N10Pb-freeTube1000/box
BD70N10TO-251BD70N10Pb-freeTube3000/box
DD70N10TO-252DD70N10Pb-freeTape & Reel2500/box
ID70N10TO-262ID70N10Pb-freeTube1000/box
ED70N10TO-263ED70N10Pb-freeTape & Reel800/box
 
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