80A 600V Fast Recovery Diode Mur8060DCT to-3p

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Jiangsu Donghai Semiconductor Co.,Ltd

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MUR8060DCT
600V
80A
Discrete Device
N-type Semiconductor
Silicon
to-3p
Switching Power Supply
Mur8060DCT
2021
Wxdh
WXDH
Tube
Wuxi, China
8541100000
Product Description
Features
Low power loss,
high efficiency Low forward voltage,
high current capability High surge capacity
Super fast recovery times
high voltage
Applications
Switching Power Supply
Power Switching Circuits
Inverter power supply
 
PARAMETERSYMBOLVALUEUNIT
 
Peak Repetitive Reverse VoltageVRRM600V
Working Peak Reverse VoltageVRWM600V
DC Blocking VoltageVR600V
Average Rectified Forward Current (single)IF(AV)40A
Average Rectified Forward Current (double)IF(AV)80A
Repetitive Peak Surge CurrentIFRM60A
Nonrepetitive Peak Surge Currentt=8.3msIFSM400A
Avalanche Energy(single)L=1mHEAS110mJ
Junction TemperatureTj-55~150ºC
storage TemperatureTstg-55~150ºC
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
MUR8060NCTTO-3PNMUR8060NCTPb-freeTube300/box
MUR8060DCTTO-3PMUR8060DCTPb-freeTube300/box
MUR8060BCTTO-247MUR8060BCTPb-freeTube300/box
 
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