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1200V 60A N-Channel Sic Power Mosfet Dhc1m040120W to-247
| Price | $1.50 |
|---|---|
| Min Order | 5000 Pieces |
| Availability | In Stock |
| Shipping From | Jiangsu, China |
| Popularity | 493 people viewed |
Model NO.:
DHC1M040120W
Voltage:
1200V
Current:
60A
Manufacturing Technology:
Discrete Device
Type:
N-type Semiconductor
Material:
Sic
Package:
to-247
Application:
Power Supplies
Model:
Dhc1m040120W
Batch Number:
2022
Brand:
Wxdh
Trademark:
WXDH
Transport Package:
Tube
Origin:
Wuxi, China
HS Code:
8541100000
Product Description
1 Description
This product family offers state of the art performance. It is
designed for high frequency applications where high
efficiency and high reliability are required. It is qualified
and manufactured on the productive 6 inch SiC line in
China fully owned by DongHai Semiconducor.
| Features |
| Higher System Efficiency |
| Reduced Cooling Requirements |
| Increased Power Density |
| Increased System Switching Frequency |
| Applications |
| Power Supplies |
| High Voltage DC/DC Converters |
| Motor Drives |
| Switch Mode Power Supplies |
| Pulsed Power applications |
| PARAMETER | SYMBOL | VALUE | UNIT | |||
| Drian-to-Source Voltage | VDSS | 1200 | V | |||
| Gate-to-Source Voltage max | VGSS | -10/+25 | V | |||
| Gate-to-Source Voltage max | VGSS | -5/+20 | V | |||
| Continuous Drain Current | ID TC=25ºC | 60 | A | |||
| TC=100ºC | 40 | A | ||||
| Pulsed Drain Current | IDM | 160 | A | |||
| Power Dissipation | Tj=150ºC | Ptot | 330 | W | ||
| TC=25ºC | Ptot | W | ||||
| Junction Temperature Range | Tj | -55~150 | ºC | |||
| Storage Temperature Range | Tstg | -55~150 | ºC | |||
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| DHC1M040120W | TO-247 | DHC1M040120W | Pb-free | Tube | 300/box |
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