1200V 60A N-Channel Sic Power Mosfet Dhc1m040120W to-247

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Jiangsu Donghai Semiconductor Co.,Ltd

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DHC1M040120W
1200V
60A
Discrete Device
N-type Semiconductor
Sic
to-247
Power Supplies
Dhc1m040120W
2022
Wxdh
WXDH
Tube
Wuxi, China
8541100000
Product Description
60A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is
designed for high frequency applications where high
efficiency and high reliability are required. It is qualified
and manufactured on the productive 6 inch SiC line in
China fully owned by DongHai Semiconducor.
 
Features
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Applications
Power Supplies
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
Pulsed Power applications
 
PARAMETERSYMBOLVALUEUNIT
   
Drian-to-Source VoltageVDSS1200V
Gate-to-Source Voltage maxVGSS-10/+25V
Gate-to-Source Voltage maxVGSS-5/+20V
Continuous Drain CurrentID TC=25ºC60A
TC=100ºC40A
Pulsed Drain CurrentIDM160A
Power DissipationTj=150ºCPtot330W
TC=25ºCPtotW
Junction Temperature RangeTj-55~150ºC
Storage Temperature RangeTstg-55~150ºC
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
DHC1M040120WTO-247DHC1M040120WPb-freeTube300/box
 
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