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20A 100V Schottkybarrierdiode Mbr20100CT to-220c
| Price | $1.50 |
|---|---|
| Min Order | 5000 Pieces |
| Availability | In Stock |
| Shipping From | Jiangsu, China |
| Popularity | 325 people viewed |
Model NO.:
MBR20100CT
Application:
Diode, Switching Power Supply
Batch Number:
2021
Certification:
RoHS
Manufacturing Technology:
Discrete Device
Material:
Silicon
Model:
Mbr20100CT
Package:
to-220c
Type:
P-Type Semiconductor
Voltage:
100V
Current:
20A
Brand:
Wxdh
Trademark:
WXDH
Transport Package:
Tube
Origin:
Wuxi, China
HS Code:
8541100000
Product Description
| Features |
| High junction temperature capabiliy |
| Low leakage current |
| Low thermal resistance |
| High frequency operation |
| Avalanche specification |
| Applications |
| Switching Power Supply |
| Power Switching Circuits |
| General Purpose |
| PARAMETER | SYMBOL | VALUE | UNIT | ||
| Peak Repetitive Reverse Voltage | VRRM | 100 | V | ||
| RMS Reverse Voltage | VR(RMS) | 80 | V | ||
| DC Blocking Voltage | VR | 100 | V | ||
| Average Rectified Forward Current(single) | TO-220,TC=120ºC TO-220F,TC=90ºC | IF(AV) | 10 | A | |
| Average Rectified Forward Current(double) | 20 | A | |||
| Repetitive Peak Surge Current(single) | IFRM | 15 | A | ||
| Nonrepetitive Peak Surge Current(single) | t=8.3ms | IFSM | 150 | A | |
| Avalanche Energy(single) | L=1mH | EAS | 24 | mJ | |
| Junction Temperature | Tj | -55~175 | ºC | ||
| storage Temperature | Tstg | -55~175 | ºC | ||
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
MBR20100CT | TO-220C | MBR20100CT | Pb-free | Tube | 1000/box |
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