20A 100V Schottkybarrierdiode Mbr20100CT to-220c

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Jiangsu Donghai Semiconductor Co.,Ltd

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Profile Certified by SGS/BV
  • Jiangsu, China
  • Winnie Gao (Ms.)  
    Saleman
MBR20100CT
Diode, Switching Power Supply
2021
RoHS
Discrete Device
Silicon
Mbr20100CT
to-220c
P-Type Semiconductor
100V
20A
Wxdh
WXDH
Tube
Wuxi, China
8541100000
Product Description
 
Features
High junction temperature capabiliy
Low leakage current
Low thermal resistance
High frequency operation
Avalanche specification
Applications
Switching Power Supply
Power Switching Circuits
General Purpose
 
PARAMETERSYMBOLVALUEUNIT
 
Peak Repetitive Reverse VoltageVRRM100V
RMS Reverse VoltageVR(RMS)80V
DC Blocking VoltageVR100V
Average Rectified Forward Current(single)TO-220,TC=120ºC
TO-220F,TC=90ºC
IF(AV)10A
Average Rectified Forward Current(double)20A
Repetitive Peak Surge Current(single)IFRM15A
Nonrepetitive Peak Surge Current(single)t=8.3msIFSM150A
Avalanche Energy(single)L=1mHEAS24mJ
Junction TemperatureTj-55~175ºC
storage TemperatureTstg-55~175ºC
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
MBR20100CT
TO-220C
MBR20100CT
Pb-freeTube1000/box
 
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