Audited Supplier
DGD600H120L2T
Welding, UPS, Three-Leve Inverter
2024
Discrete Device
Metal-Oxide Semiconductor
Dgd600h120L2t
Econodual3
N-Type Semiconductor
Wxdh
WXDH
Box
Wuxi, China
8541290000
Product Description
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and
Fieldstop technology design, provided excellent VCEsat and switching
speed ,low gate charge. Which accords with the RoHS standard
| Features |
| FS Trench Technology, Positive temperature coefficient |
| Low saturation voltage: VCE(sat), typ = 2.25V @ IC =75A and Tj = 25°C |
| Extremely enhanced avalanche capability |
| Applications |
| Welding |
| UPS |
| Three-leve Inverter |
| AC and DC servo drive amplifier |
| Type | VCE | IC | VCEsat,Tj=25ºC | Tjop | Package |
DGD600H120L2T | 1200V | 600A (Tj=100ºC) | 1.79V (Typ) | 150ºC | EconoDUAL3 |
5.1Absolute Maximum Ratings (IGBT) (Tc=25ºC,unless otherwise specified)
| PARAMETER | SYMBOL | VALUE | UNIT | |||
| Collector-to-Emitter Voltage | VCE | 1200 | V | |||
| Gate-to-Emitter Voltage | VGE | ±25 | V | |||
| DC Collector current | Ic Tj=100ºC | 600 | A | |||
| Pulsed Collector Current #1 | ICM | 1200 | A | |||
5.2 Absolute Maximum Ratings (Diode) (Tc=25ºC,unless otherwise specified)
| PARAMETER | SYMBOL | VALUE | UNIT | |||
| Peak Repetitive Reverse Voltage | VRRM | 1200 | V | |||
| DC Blocking Voltage | VR | 1200 | V | |||
| Average Rectified Forward Current | IF(AV) | 600 | A | |||
| Repetitive Peak Surge Current | IFRM | 1200 | A | |||
5.53IGBT Module
| PARAMETER | SYMBOL | VALUE | UNIT | |||
| Junction Temperature Range | Tjmax | -40~175 | ºC | |||
| Operating Junction Temperature | Tjop | -40~175 | ºC | |||
| Storage Temperature Range | Tstg | -40~175 | ºC | |||
| Isolation Voltage RMS,f=50Hz,t=1min | VISO | 3500 | A | |||
5.4Thermal Characteristics(IGBT Module)
| PARAMETER | SYMBOL | VALUE | UNIT | ||||||
| Thermal Resistance Junction to Case | IGBT RthJC | 0.033 | ºC/W | ||||||
| Diode RthJC | 0.065 | ºC/W | |||||||
