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Insulated Gate Bipolar Transistor IGBT G30n60d to-247

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Jiangsu Donghai Semiconductor Co.,Ltd

Audited Supplier 5 years

Profile Certified by SGS/BV

Jiangsu, China
Winnie Gao (Ms.)
Saleman

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Product Detail

Model NO.:

G30N60D

Application:

Inverter Welding Machine, UPS

Batch Number:

2022

Manufacturing Technology:

Discrete Device

Material:

Silicon

Model:

G30n60d

Package:

to-247

Type:

N-Type Semiconductor

Brand:

Wxdh

Trademark:

WXDH

Transport Package:

Tube

Origin:

Wuxi, China

HS Code:

8541290000

Product Description

PARAMETER		SYMBOL	RATING	UNIT

Collector-Emitter Voltage		V_CES	600	V
Gate- Emitter Voltage		V_GES	±20	V
Collector Current		I_C(T=25ºC)	60	A
Collector Current		(Tc=100ºC)	30	A
Pulsed Collector Current		I_CM	90	A
Diode Continuous Forward Current		I_F@TC = 100 °C	20	A
Diode Maximum Forward Current		I_FM	100	A
Total Dissipation	T_C=25ºC	P_D	250	W
	T_C=100ºC	P_D	100	W
Junction Temperature		T_j	150	ºC
storage Temperature		T_stg	-55~150	ºC

Features

FS Trench Technology, Positive temperature coefficient

Low saturation voltage: V_CE(sat), typ = 2.0V
@ I_C=30A and V_GE=15V

Mainly used in inverter welding machine, suitable for working frequency < 50kHz.

Applications

Inverter welding machine

Solar inverter

UPS

Medium and high switching frequency converter

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
G30N60D	TO-247	G30N60D	Pb-free	Tube	300/box

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