120A 100V N-Channel Enhancement Mode Power Mosfet Dhe10h037r to-263

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Jiangsu Donghai Semiconductor Co.,Ltd

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Profile Certified by SGS/BV
  • Jiangsu, China
  • Winnie Gao (Ms.)  
    Saleman
DHE10H037R
Power Switching Applications
2021
Discrete Device
Metal-Oxide Semiconductor
Dhe10h037r
to-263
P-Type Semiconductor
100V
120A
Wxdh
WXDH
Tape & Reel
Wuxi, China
8541290000
Product Description
PARAMETERSYMBOLVALUEUNIT
DHF10H
037R
DH10H037R/
DHE10H037R
Drian-to-Source VoltageVDSS100V
Gate-to-Source VoltageVGSS±20V
Drain Current(continuous)ID(T=25ºC)120A
(T=100ºC)109A
Drain Current(Pulsed)IDM480A
Single Pulse Avalanche EnergyEAS1200mJ
Total DissipationTa=25ºCPtot22W
TC=25ºCPtot90227W
Junction TemperatureTj-55~150ºC
storage TemperatureTstg-55~150ºC
 
Features
Fast Switching
Low ON Resistance
Low Gate Charge
High avalanche Current
Low Reverse Transfer Capacitances
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
 
Switching power supply
Inverter power management system
Power tool control
Automotive electronics applications
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
DHE10H037R
TO-263
DHE10H037R
Pb-feeREEL800/box
 
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